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Results: 1-23 |
Results: 23
MODELING STATISTICAL DOPANT FLUCTUATIONS IN MOS-TRANSISTORS
Authors: STOLK PA WIDDERSHOVEN FP KLAASSEN DBM
Citation: Pa. Stolk et al., MODELING STATISTICAL DOPANT FLUCTUATIONS IN MOS-TRANSISTORS, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1960-1971
PHYSICAL-MECHANISMS OF TRANSIENT ENHANCED DOPANT DIFFUSION IN ION-IMPLANTED SILICON
Authors: STOLK PA GOSSMANN HJ EAGLESHAM DJ JACOBSON DC RAFFERTY CS GILMER GH JARAIZ M POATE JM LUFTMAN HS HAYNES TE
Citation: Pa. Stolk et al., PHYSICAL-MECHANISMS OF TRANSIENT ENHANCED DOPANT DIFFUSION IN ION-IMPLANTED SILICON, Journal of applied physics, 81(9), 1997, pp. 6031-6050
THE INTERSTITIAL FRACTION OF DIFFUSIVITY OF COMMON DOPANTS IN SI
Authors: GOSSMANN HJ HAYNES TE STOLK PA JACOBSON DC GILMER GH POATE JM LUFTMAN HS MOGI TK THOMPSON MO
Citation: Hj. Gossmann et al., THE INTERSTITIAL FRACTION OF DIFFUSIVITY OF COMMON DOPANTS IN SI, Applied physics letters, 71(26), 1997, pp. 3862-3864
TRANSIENT ENHANCED DIFFUSION OF SB AND B DUE TO MEV SILICON IMPLANTS
Authors: EAGLESHAM DJ HAYNES TE GOSSMANN HJ JACOBSON DC STOLK PA POATE JM
Citation: Dj. Eaglesham et al., TRANSIENT ENHANCED DIFFUSION OF SB AND B DUE TO MEV SILICON IMPLANTS, Applied physics letters, 70(24), 1997, pp. 3281-3283
THE EFFECT OF CARBON ON DIFFUSION IN SILICON
Authors: STOLK PA GOSSMANN HJ EAGLESHAM DJ POATE JM
Citation: Pa. Stolk et al., THE EFFECT OF CARBON ON DIFFUSION IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 275-281
DEFECTS IN ION-IMPLANTED CRYSTALLINE SILICON PROBED BY FEMTOSECOND LASER SPECTROSCOPY
Authors: CALCAGNILE L STOLK PA
Citation: L. Calcagnile et Pa. Stolk, DEFECTS IN ION-IMPLANTED CRYSTALLINE SILICON PROBED BY FEMTOSECOND LASER SPECTROSCOPY, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(5), 1996, pp. 595-603
TIME SCALES OF TRANSIENT ENHANCED DIFFUSION - FREE AND CLUSTERED INTERSTITIALS
Authors: COWERN NEB HUIZING HGA STOLK PA VISSER CCG DEKRUIF RCM LARSEN KK PRIVITERA V NANVER LK CRANS W
Citation: Neb. Cowern et al., TIME SCALES OF TRANSIENT ENHANCED DIFFUSION - FREE AND CLUSTERED INTERSTITIALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 14-18
HYDROGEN SOLUBILITY AND NETWORK STABILITY IN AMORPHOUS-SILICON
Authors: ACCO S WILLIAMSON DL STOLK PA SARIS FW VANDENBOOGAARD MJ SINKE WC VANDERWEG WF ROORDA S
Citation: S. Acco et al., HYDROGEN SOLUBILITY AND NETWORK STABILITY IN AMORPHOUS-SILICON, Physical review. B, Condensed matter, 53(8), 1996, pp. 4415-4427
IRON GETTERING MECHANISMS IN SILICON
Authors: BENTON JL STOLK PA EAGLESHAM DJ JACOBSON DC CHENG JY POATE JM HA NT HAYNES TE MYERS SM
Citation: Jl. Benton et al., IRON GETTERING MECHANISMS IN SILICON, Journal of applied physics, 80(6), 1996, pp. 3275-3284
FORMATION OF EXTENDED DEFECTS IN SILICON BY HIGH-ENERGY B-IMPLANTATION AND P-IMPLANTATION
Authors: CHENG JY EAGLESHAM DJ JACOBSON DC STOLK PA BENTON JL POATE JM
Citation: Jy. Cheng et al., FORMATION OF EXTENDED DEFECTS IN SILICON BY HIGH-ENERGY B-IMPLANTATION AND P-IMPLANTATION, Journal of applied physics, 80(4), 1996, pp. 2105-2112
THE MECHANISMS OF IRON GETTERING IN SILICON BY BORON ION-IMPLANTATION
Authors: BENTON JL STOLK PA EAGLESHAM DJ JACOBSON DC CHENG JY POATE JM MYERS SM HAYNES TE
Citation: Jl. Benton et al., THE MECHANISMS OF IRON GETTERING IN SILICON BY BORON ION-IMPLANTATION, Journal of the Electrochemical Society, 143(4), 1996, pp. 1406-1409
ULTRAFAST INTERSTITIAL INJECTION DURING TRANSIENT ENHANCED DIFFUSION OF BORON IN SILICON
Authors: HUIZING HGA VISSER CCG COWERN NEB STOLK PA DEKRUIF RCM
Citation: Hga. Huizing et al., ULTRAFAST INTERSTITIAL INJECTION DURING TRANSIENT ENHANCED DIFFUSION OF BORON IN SILICON, Applied physics letters, 69(9), 1996, pp. 1211-1213
INTERACTIONS OF ION-IMPLANTATION-INDUCED INTERSTITIALS WITH BORON AT HIGH-CONCENTRATIONS IN SILICON
Authors: HAYNES TE EAGLESHAM DJ STOLK PA GOSSMANN HJ JACOBSON DC POATE JM
Citation: Te. Haynes et al., INTERACTIONS OF ION-IMPLANTATION-INDUCED INTERSTITIALS WITH BORON AT HIGH-CONCENTRATIONS IN SILICON, Applied physics letters, 69(10), 1996, pp. 1376-1378
THE MECHANISM OF IRON GETTERING IN BORON-DOPED SILICON
Authors: STOLK PA BENTON JL EAGLESHAM DJ JACOBSON DC CHENG JY POATE JM MYERS SM HAYNES TE
Citation: Pa. Stolk et al., THE MECHANISM OF IRON GETTERING IN BORON-DOPED SILICON, Applied physics letters, 68(1), 1996, pp. 51-53
IMPLANTATION AND TRANSIENT BORON-DIFFUSION - THE ROLE OF THE SILICON SELF-INTERSTITIAL
Authors: STOLK PA GOSSMANN HJ EAGLESHAM DJ POATE JM
Citation: Pa. Stolk et al., IMPLANTATION AND TRANSIENT BORON-DIFFUSION - THE ROLE OF THE SILICON SELF-INTERSTITIAL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 187-195
IMPLANT DAMAGE AND TRANSIENT ENHANCED DIFFUSION IN SI
Authors: EAGLESHAM DJ STOLK PA GOSSMANN HJ HAYNES TE POATE JM
Citation: Dj. Eaglesham et al., IMPLANT DAMAGE AND TRANSIENT ENHANCED DIFFUSION IN SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 191-197
FAST METAL DIFFUSERS IN SI IN THE PRESENCE OF SI SELF-INTERSTITIAL TRAPS
Authors: GOSSMANN HJ STOLK PA EAGLESHAM DJ RAFFERTY CS POATE JM
Citation: Hj. Gossmann et al., FAST METAL DIFFUSERS IN SI IN THE PRESENCE OF SI SELF-INTERSTITIAL TRAPS, Applied physics letters, 67(21), 1995, pp. 3135-3137
ON THE NANOSTRUCTURE OF PURE AMORPHOUS-SILICON
Authors: WILLIAMSON DL ROORDA S CHICOINE M TABTI R STOLK PA ACCO S SARIS FW
Citation: Dl. Williamson et al., ON THE NANOSTRUCTURE OF PURE AMORPHOUS-SILICON, Applied physics letters, 67(2), 1995, pp. 226-228
TRAP-LIMITED INTERSTITIAL DIFFUSION AND ENHANCED BORON CLUSTERING IN SILICON
Authors: STOLK PA GOSSMANN HJ EAGLESHAM DJ JACOBSON DC POATE JM LUFTMAN HS
Citation: Pa. Stolk et al., TRAP-LIMITED INTERSTITIAL DIFFUSION AND ENHANCED BORON CLUSTERING IN SILICON, Applied physics letters, 66(5), 1995, pp. 568-570
CARBON INCORPORATION IN SILICON FOR SUPPRESSING INTERSTITIAL-ENHANCEDBORON-DIFFUSION
Authors: STOLK PA EAGLESHAM DJ GOSSMANN HJ POATE JM
Citation: Pa. Stolk et al., CARBON INCORPORATION IN SILICON FOR SUPPRESSING INTERSTITIAL-ENHANCEDBORON-DIFFUSION, Applied physics letters, 66(11), 1995, pp. 1370-1372
CONTRIBUTION OF DEFECTS TO ELECTRONIC, STRUCTURAL, AND THERMODYNAMIC PROPERTIES OF AMORPHOUS-SILICON
Authors: STOLK PA SARIS FW BERNTSEN AJM VANDERWEG WF SEALY LT BARKLIE RC KROTZ G MULLER G
Citation: Pa. Stolk et al., CONTRIBUTION OF DEFECTS TO ELECTRONIC, STRUCTURAL, AND THERMODYNAMIC PROPERTIES OF AMORPHOUS-SILICON, Journal of applied physics, 75(11), 1994, pp. 7266-7286
IMPLANTATION AND TRANSIENT B-DIFFUSION IN SI - THE SOURCE OF THE INTERSTITIALS
Authors: EAGLESHAM DJ STOLK PA GOSSMANN HJ POATE JM
Citation: Dj. Eaglesham et al., IMPLANTATION AND TRANSIENT B-DIFFUSION IN SI - THE SOURCE OF THE INTERSTITIALS, Applied physics letters, 65(18), 1994, pp. 2305-2307
SEPARATING THE EFFECTS OF HYDROGEN AND BOND-ANGLE VARIATION ON THE AMORPHOUS-SILICON BAND-GAP
Authors: BERNTSEN AJM VANDERWEG WF STOLK PA SARIS FW
Citation: Ajm. Berntsen et al., SEPARATING THE EFFECTS OF HYDROGEN AND BOND-ANGLE VARIATION ON THE AMORPHOUS-SILICON BAND-GAP, Physical review. B, Condensed matter, 48(19), 1993, pp. 14656-14658
Risultati: 1-23 |