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Results:
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Results: 21
Authors:
GLASS JT
FOX BA
DREIFUS DL
STONER BR
Citation: Jt. Glass et al., DIAMOND FOR ELECTRONICS - FUTURE-PROSPECTS OF DIAMOND SAW DEVICES, MRS bulletin, 23(9), 1998, pp. 49-55
Authors:
LIU J
ZHIRNOV VV
MYERS AF
WOJAK GJ
CHOI WB
HREN JJ
WOLTER SD
MCCLURE MT
STONER BR
GLASS JT
Citation: J. Liu et al., FIELD-EMISSION CHARACTERISTICS OF DIAMOND-COATED SILICON FIELD EMITTERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 422-426
Authors:
ELLIS PJ
BUHAENKO DS
STONER BR
Citation: Pj. Ellis et al., SOME EFFECTS OF SILICON SUBSTRATE ROUGHNESS ON THE GROWTH OF HIGHLY ORIENTED (100) DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 406-409
Authors:
KISTENMACHER TJ
ECELBERGER SA
STONER BR
Citation: Tj. Kistenmacher et al., ASSESSING POLAR AND AZIMUTHAL CORRELATIONS FOR AN ORIENTED MOSAIC OF (001) DIAMOND CRYSTALLITES ON (001) SILICON, DIAMOND AND RELATED MATERIALS, 4(11), 1995, pp. 1289-1295
Authors:
ZHU W
SIVAZLIAN FR
STONER BR
GLASS JT
Citation: W. Zhu et al., NUCLEATION AND SELECTED-AREA DEPOSITION OF DIAMOND BY BIASED HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION, Journal of materials research, 10(2), 1995, pp. 425-430
Authors:
WOLTER SD
GLASS JT
STONER BR
Citation: Sd. Wolter et al., INVESTIGATION OF THE PROCESS FACTOR SPACE ON BIAS-ENHANCED NUCLEATIONOF DIAMOND ON SILICON, Thin solid films, 261(1-2), 1995, pp. 4-11
Authors:
TUCKER DA
SEO DK
WHANGBO MH
SIVAZLIAN FR
STONER BR
BOZEMAN SP
SOWERS AT
NEMANICH RJ
GLASS JT
Citation: Da. Tucker et al., COMPARISON OF SILICON, NICKEL, AND NICKEL SILICIDE (NI3SI) AS SUBSTRATES FOR EPITAXIAL DIAMOND GROWTH, Surface science, 334(1-3), 1995, pp. 179-194
Authors:
WOLTER SD
GLASS JT
STONER BR
Citation: Sd. Wolter et al., BIAS INDUCED DIAMOND NUCLEATION STUDIES ON REFRACTORY-METAL SUBSTRATES, Journal of applied physics, 77(10), 1995, pp. 5119-5124
Authors:
BOZEMAN SP
TUCKER DA
STONER BR
GLASS JT
HOOKE WM
Citation: Sp. Bozeman et al., DIAMOND DEPOSITION USING A PLANAR RADIO-FREQUENCY INDUCTIVELY-COUPLEDPLASMA, Applied physics letters, 66(26), 1995, pp. 3579-3581
Authors:
WOLTER SD
MCCLURE MT
GLASS JT
STONER BR
Citation: Sd. Wolter et al., BIAS-ENHANCED NUCLEATION OF HIGHLY ORIENTED DIAMOND ON TITANIUM CARBIDE (111) SUBSTRATES, Applied physics letters, 66(21), 1995, pp. 2810-2812
Authors:
WOLTER SD
STONER BR
GLASS JT
Citation: Sd. Wolter et al., THE EFFECT OF SUBSTRATE MATERIAL ON BIAS-ENHANCED DIAMOND NUCLEATION, DIAMOND AND RELATED MATERIALS, 3(9), 1994, pp. 1188-1195
Authors:
FOX BA
STONER BR
MALTA DM
ELLIS PJ
GLASS RC
SIVAZLIAN FR
Citation: Ba. Fox et al., EPITAXIAL NUCLEATION, GROWTH AND CHARACTERIZATION OF HIGHLY ORIENTED,(100)-TEXTURED DIAMOND FILMS ON SILICON, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 382-387
Authors:
BUHAENKO DS
SOUTHWORTH P
JENKINS CE
ELLIS PJ
STONER BR
Citation: Ds. Buhaenko et al., CATHODOLUMINESCENCE STUDIES OF ORIENTED DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 926-931
Authors:
SIVAZLIAN FR
GLASS JT
STONER BR
Citation: Fr. Sivazlian et al., INVESTIGATION OF THE LOW-ANGLE GRAIN-BOUNDARIES IN HIGHLY ORIENTED DIAMOND FILMS VIA TRANSMISSION ELECTRON-MICROSCOPY, Journal of materials research, 9(10), 1994, pp. 2487-2489
Authors:
EVERSON MP
TAMOR MA
SCHOLL D
STONER BR
SAHAIDA SR
BADE JP
Citation: Mp. Everson et al., POSITIVE IDENTIFICATION OF THE UBIQUITOUS TRIANGULAR DEFECT ON THE (100) FACES OF VAPOR-GROWN DIAMOND, Journal of applied physics, 75(1), 1994, pp. 169-172
Authors:
GRAHAM RJ
SHAAPUR F
KATO Y
STONER BR
Citation: Rj. Graham et al., IMAGING OF BORON DOPANT IN HIGHLY ORIENTED DIAMOND FILMS BY CATHODOLUMINESCENCE IN A TRANSMISSION ELECTRON-MICROSCOPE, Applied physics letters, 65(3), 1994, pp. 292-294
Authors:
LIU J
ZHIRNOV VV
WOJAK GJ
MYERS AF
CHOI WB
HREN JJ
WOLTER SD
MCCLURE MT
STONER BR
GLASS JT
Citation: J. Liu et al., ELECTRON-EMISSION FROM DIAMOND-COATED SILICON FIELD EMITTERS, Applied physics letters, 65(22), 1994, pp. 2842-2844
Authors:
STONER BR
SAHAIDA SR
BADE JP
SOUTHWORTH P
ELLIS PJ
Citation: Br. Stoner et al., HIGHLY ORIENTED, TEXTURED DIAMOND FILMS ON SILICON VIA BIAS-ENHANCED NUCLEATION AND TEXTURED GROWTH, Journal of materials research, 8(6), 1993, pp. 1334-1340
Authors:
BERGMAN L
STONER BR
TURNER KF
GLASS JT
NEMANICH RJ
Citation: L. Bergman et al., MICROPHOTOLUMINESCENCE AND RAMAN-SCATTERING STUDY OF DEFECT FORMATIONIN DIAMOND FILMS, Journal of applied physics, 73(8), 1993, pp. 3951-3957
Authors:
KOHL R
WILD C
HERRES N
KOIDL P
STONER BR
GLASS JT
Citation: R. Kohl et al., ORIENTED NUCLEATION AND GROWTH OF DIAMOND FILMS ON BETA-SIC AND SI, Applied physics letters, 63(13), 1993, pp. 1792-1794
Authors:
STONER BR
KAO CT
MALTA DM
GLASS RC
Citation: Br. Stoner et al., HALL-EFFECT MEASUREMENTS ON BORON-DOPED, HIGHLY ORIENTED DIAMOND FILMS GROWN ON SILICON VIA MICROWAVE PLASMA CHEMICAL-VAPOR DEPOSITION, Applied physics letters, 62(19), 1993, pp. 2347-2349
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