AAAAAA

   
Results: 1-13 |
Results: 13
SCANNING CAPACITANCE MICROSCOPY IMAGING OF THREADING DISLOCATIONS IN GAN FILMS GROWN ON (0001) SAPPHIRE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: HANSEN PJ STRAUSSER YE ERICKSON AN TARSA EJ KOZODOY P BRAZEL EG IBBETSON JP MISHRA U NARAYANAMURTI V DENBAARS SP SPECK JS
Citation: Pj. Hansen et al., SCANNING CAPACITANCE MICROSCOPY IMAGING OF THREADING DISLOCATIONS IN GAN FILMS GROWN ON (0001) SAPPHIRE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 72(18), 1998, pp. 2247-2249
EFFECTS OF PROCESSING CONDITIONS ON THE GROWTH OF NANOCRYSTALLINE DIAMOND THIN-FILMS - REAL-TIME SPECTROSCOPIC ELLIPSOMETRY STUDIES
Authors: HONG BY LEE J COLLINS RW KUANG YL DRAWL W MESSIER R TSONG TT STRAUSSER YE
Citation: By. Hong et al., EFFECTS OF PROCESSING CONDITIONS ON THE GROWTH OF NANOCRYSTALLINE DIAMOND THIN-FILMS - REAL-TIME SPECTROSCOPIC ELLIPSOMETRY STUDIES, DIAMOND AND RELATED MATERIALS, 6(1), 1997, pp. 55-80
ANALYSIS OF THE GROWTH-PROCESSES OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS FROM CO H-2 AND CH4/H-2 MIXTURES USING REAL-TIMESPECTROELLIPSOMETRY/
Authors: LEE J COLLINS RW HONG B MESSIER R STRAUSSER YE
Citation: J. Lee et al., ANALYSIS OF THE GROWTH-PROCESSES OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS FROM CO H-2 AND CH4/H-2 MIXTURES USING REAL-TIMESPECTROELLIPSOMETRY/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 1929-1936
CHARACTERIZATION OF THE LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION GROWN RUGGED POLYSILICON SURFACE USING ATOMIC-FORCE MICROSCOPY
Authors: STRAUSSER YE SCHROTH M SWEENEY JJ
Citation: Ye. Strausser et al., CHARACTERIZATION OF THE LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION GROWN RUGGED POLYSILICON SURFACE USING ATOMIC-FORCE MICROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 1007-1013
300-MM PREMETAL DIELECTRIC PROCESSING
Authors: SCHAFFER WJ SCHEY D BOWMAN ML MCGAHAN WA BOISEN JK STRAUSSER YE BRAN ME
Citation: Wj. Schaffer et al., 300-MM PREMETAL DIELECTRIC PROCESSING, Solid state technology, 40(9), 1997, pp. 117
SCANNING CAPACITANCE MICROSCOPY FOR CARRIER PROFILING IN SEMICONDUCTORS
Authors: ERICKSON AN ADDERTON DM STRAUSSER YE TENCH RJ
Citation: An. Erickson et al., SCANNING CAPACITANCE MICROSCOPY FOR CARRIER PROFILING IN SEMICONDUCTORS, Solid state technology, 40(6), 1997, pp. 125
LOW-TEMPERATURE PLASMA PROCESS-BASED ON CO-RICH CO H-2 MIXTURES FOR HIGH-RATE DIAMOND FILM DEPOSITION/
Authors: LEE J COLLINS RW MESSIER R STRAUSSER YE
Citation: J. Lee et al., LOW-TEMPERATURE PLASMA PROCESS-BASED ON CO-RICH CO H-2 MIXTURES FOR HIGH-RATE DIAMOND FILM DEPOSITION/, Applied physics letters, 70(12), 1997, pp. 1527-1529
CORRELATION OF REAL-TIME SPECTROELLIPSOMETRY AND ATOMIC-FORCE MICROSCOPY MEASUREMENTS OF SURFACE-ROUGHNESS ON AMORPHOUS-SEMICONDUCTOR THIN-FILMS
Authors: KOH J LU YW WRONSKI CR KUANG YL COLLINS RW TSONG TT STRAUSSER YE
Citation: J. Koh et al., CORRELATION OF REAL-TIME SPECTROELLIPSOMETRY AND ATOMIC-FORCE MICROSCOPY MEASUREMENTS OF SURFACE-ROUGHNESS ON AMORPHOUS-SEMICONDUCTOR THIN-FILMS, Applied physics letters, 69(9), 1996, pp. 1297-1299
STEP STRUCTURE DURING ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF ORDERED GAINP
Authors: STRINGFELLOW GB SU LC STRAUSSER YE THORNTON JT
Citation: Gb. Stringfellow et al., STEP STRUCTURE DURING ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF ORDERED GAINP, Journal of electronic materials, 24(11), 1995, pp. 1591-1595
ATOMIC-FORCE MICROSCOPY STUDY OF ORDERED GAINP
Authors: STRINGFELLOW GB SU LC STRAUSSER YE THORNTON JT
Citation: Gb. Stringfellow et al., ATOMIC-FORCE MICROSCOPY STUDY OF ORDERED GAINP, Applied physics letters, 66(23), 1995, pp. 3155-3157
ANISOTROPIC ROUGHNESS IN GE SI SUPERLATTICES
Authors: HEADRICK RL BARIBEAU JM STRAUSSER YE
Citation: Rl. Headrick et al., ANISOTROPIC ROUGHNESS IN GE SI SUPERLATTICES, Applied physics letters, 66(1), 1995, pp. 96-98
NEW METROLOGY FOR DEFECT INSPECTION
Authors: STRAUSSER YE HEATON MG
Citation: Ye. Strausser et Mg. Heaton, NEW METROLOGY FOR DEFECT INSPECTION, Photonics spectra, 28(9), 1994, pp. 85-85
SCANNING PROBE MICROSCOPY - TECHNOLOGY AND RECENT INNOVATIONS
Authors: STRAUSSER YE HEATON MG
Citation: Ye. Strausser et Mg. Heaton, SCANNING PROBE MICROSCOPY - TECHNOLOGY AND RECENT INNOVATIONS, American laboratory, 26(6), 1994, pp. 20
Risultati: 1-13 |