Authors: FANG XM CHAO IN STRECKER BN MCCANN PJ YUAN S LIU WK SANTOS MB

Citation: Xm. Fang et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF BI2SE3-DOPED AND TL2SE-DOPED PBSE AND PBEUSE ON CAF2 SI(111)/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1459-1462

Authors: STRECKER BN MCCANN PJ FANG XM HAUENSTEIN RJ OSTEEN M JOHNSON MB

Citation: Bn. Strecker et al., LPE GROWTH OF CRACK-FREE PBSE LAYERS ON SI(100) USING MBE-GROWN PBSE BAF2/CAF2 BUFFER LAYERS/, Journal of electronic materials, 26(5), 1997, pp. 444-448

Authors: MCCANN PJ FANG XM LIU WK STRECKER BN SANTOS MB

Citation: Pj. Mccann et al., MBE GROWTH OF PBSE CAF2/SI(111) HETEROSTRUCTURES/, Journal of crystal growth, 175, 1997, pp. 1057-1062