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Results:
1-18
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Results: 18
Authors:
STRITE S
WILD J
Citation: S. Strite et J. Wild, SWISS-BASED DIODE-LASER FAB OPENS NEW CHAPTER FOR UNIPHASE, Laser focus, 34(6), 1998, pp. 51-53
Authors:
SUSKI T
JUN J
LESZCZYNSKI M
TEISSEYRE H
STRITE S
ROCKETT A
PELZMANN A
KAMP M
EBELING KJ
Citation: T. Suski et al., OPTICAL ACTIVATION AND DIFFUSIVITY OF ION-IMPLANTED ZN ACCEPTORS IN GAN UNDER HIGH-PRESSURE, HIGH-TEMPERATURE ANNEALING, Journal of applied physics, 84(2), 1998, pp. 1155-1157
Authors:
STRITE S
Citation: S. Strite, WORKSHOP SUMMARIZES GALLIUM NITRIDE RESEARCH, Laser focus, 32(8), 1996, pp. 26
Authors:
STRITE S
KAMP M
MEIER HP
Citation: S. Strite et al., RELIABLE SUBSTRATE-TEMPERATURE MEASUREMENTS FOR HIGH-TEMPERATURE ALGAAS MOLECULAR-BEAM EPITAXY GROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 290-292
Authors:
MARTIN G
STRITE S
BOTCHKAREV A
AGARWAL A
ROCKETT A
LAMBRECHT WRL
SEGALL B
MORKOC H
Citation: G. Martin et al., VALENCE-BAND DISCONTINUITY BETWEEN GAN AND ALN MEASURED BY X-RAY PHOTOEMISSION SPECTROSCOPY, Journal of electronic materials, 24(4), 1995, pp. 225-227
Authors:
CHANDRASEKHAR D
SMITH DJ
STRITE S
LIN ME
MORKOC H
Citation: D. Chandrasekhar et al., CHARACTERIZATION OF GROUP-III NITRIDE SEMICONDUCTORS BY HIGH-RESOLUTION ELECTRON-MICROSCOPY, Journal of crystal growth, 152(3), 1995, pp. 135-142
Authors:
UNLU MS
STRITE S
Citation: Ms. Unlu et S. Strite, RESONANT-CAVITY ENHANCED PHOTONIC DEVICES, Journal of applied physics, 78(2), 1995, pp. 607-639
Authors:
STRITE S
UNLU MS
Citation: S. Strite et Ms. Unlu, TUNABLE PHOTODETECTORS AND LIGHT-EMITTING-DIODES FOR WAVELENGTH-DIVISION MULTIPLEXING, Electronics Letters, 31(8), 1995, pp. 672-674
Authors:
STRITE S
Citation: S. Strite, GAN CORE RELAXATION EFFECTS AND THEIR RAMIFICATIONS FOR P-TYPE DOPING, JPN J A P 2, 33(5B), 1994, pp. 120000699-120000701
Authors:
LAMBRECHT WRL
SEGALL B
STRITE S
MARTIN G
AGARWAL A
MORKOC H
ROCKETT A
Citation: Wrl. Lambrecht et al., X-RAY PHOTOELECTRON-SPECTROSCOPY AND THEORY OF THE VALENCE-BAND AND SEMICORE GA 3D STATES IN GAN, Physical review. B, Condensed matter, 50(19), 1994, pp. 14155-14160
Authors:
MEIER HP
KAMP M
STRITE S
Citation: Hp. Meier et al., ROLE OF MOLECULAR-BEAM EPITAXY IN THE FIELD OF OPTOELECTRONICS, Microelectronics, 25(8), 1994, pp. 609-617
Authors:
MORKOC H
STRITE S
GAO GB
LIN ME
SVERDLOV B
BURNS M
Citation: H. Morkoc et al., LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES, Journal of applied physics, 76(3), 1994, pp. 1363-1398
Authors:
MARTIN G
STRITE S
BOTCHKAREV A
AGARWAL A
ROCKETT A
MORKOC H
LAMBRECHT WRL
SEGALL B
Citation: G. Martin et al., VALENCE-BAND DISCONTINUITY BETWEEN GAN AND ALN MEASURED BY X-RAY PHOTOEMISSION SPECTROSCOPY, Applied physics letters, 65(5), 1994, pp. 610-612
Authors:
HWANG SJ
SHAN W
HAUENSTEIN RJ
SONG JJ
LIN ME
STRITE S
SVERDLOV BN
MORKOC H
Citation: Sj. Hwang et al., PHOTOLUMINESCENCE OF ZINCBLENDE GAN UNDER HYDROSTATIC-PRESSURE, Applied physics letters, 64(22), 1994, pp. 2928-2930
Authors:
STRITE S
LIN ME
MORKOC H
Citation: S. Strite et al., PROGRESS AND PROSPECTS FOR GAN AND THE III-V-NITRIDE SEMICONDUCTORS, Thin solid films, 231(1-2), 1993, pp. 197-210
STRUCTURAL-PROPERTIES OF INN FILMS GROWN ON GAAS SUBSTRATES - OBSERVATION OF THE ZINCBLENDE POLYTYPE
Authors:
STRITE S
CHANDRASEKHAR D
SMITH DJ
SARIEL J
CHEN H
TERAGUCHI N
MORKOC H
Citation: S. Strite et al., STRUCTURAL-PROPERTIES OF INN FILMS GROWN ON GAAS SUBSTRATES - OBSERVATION OF THE ZINCBLENDE POLYTYPE, Journal of crystal growth, 127(1-4), 1993, pp. 204-208
Authors:
MUI DSL
DEMIREL AL
STRITE S
WANG Z
REED J
BISWAS D
MORKOC H
Citation: Dsl. Mui et al., CHARACTERISTICS OF INSITU DEPOSITED SI3N4 SI/IN0.53GA0.47AS METAL-INSULATOR-SEMICONDUCTOR STRUCTURES/, Journal of crystal growth, 127(1-4), 1993, pp. 803-806
Authors:
LIN ME
SVERDLOV BN
STRITE S
MORKOC H
DRAKIN AE
Citation: Me. Lin et al., REFRACTIVE-INDEXES OF WURTZITE AND ZINCBLENDE GAN, Electronics Letters, 29(20), 1993, pp. 1759-1761
Risultati:
1-18
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