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Results: 1-25/51
Authors:
MA XY
SUDARSHAN TS
Citation: Xy. Ma et Ts. Sudarshan, PREBREAKDOWN AND BREAKDOWN INVESTIGATION OF BROAD AREA ELECTRODES IN THE MICROMETRIC REGIME, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1174-1179
Authors:
MA XY
SUDARSHAN TS
Citation: Xy. Ma et Ts. Sudarshan, HIGH-FIELD BREAKDOWN CHARACTERISTICS OF MICROMETRIC GAPS IN VACUUM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 745-748
Authors:
KHOR KA
CAO Y
BOEY FYC
HANADA K
MURAKOSHI Y
SUDARSHAN TS
SRIVATSAN TS
Citation: Ka. Khor et al., PROCESSING AND RESPONSE OF ALUMINUM-LITHIUM ALLOY COMPOSITES REINFORCED WITH COPPER-COATED SILICON-CARBIDE PARTICULATES, Journal of materials engineering and performance, 7(1), 1998, pp. 66-70
Authors:
SUDARSHAN TS
Citation: Ts. Sudarshan, SURFACE MODIFICATION, NETWORKING, AND MIRACLES, Advanced materials & processes, 154(2), 1998, pp. 4-4
Authors:
SOLOVIEV S
KHLEBNIKOV I
MADANGARLI V
SUDARSHAN TS
Citation: S. Soloviev et al., CORRELATION BETWEEN OXIDE BREAKDOWN AND DEFECTS IN SIC WATERS, Journal of electronic materials, 27(10), 1998, pp. 1124-1127
Authors:
YOO S
KRUPASHANKARA MS
SUDARSHAN TS
Citation: S. Yoo et al., ULTRAHIGH PRESSURE CONSOLIDATION (UHPC) OF W-CU COMPOSITES, Materials science and technology, 14(2), 1998, pp. 170-174
Authors:
SUDARSHAN TS
GRADINARU G
YANG J
KHAN MA
Citation: Ts. Sudarshan et al., SURFACE FLASHOVER EFFECTS IN ALGAN GAN HFETS, Electronics Letters, 34(9), 1998, pp. 927-928
Authors:
GRADINARU G
KHAN MA
KAO NC
SUDARSHAN TS
CHEN Q
YANG J
Citation: G. Gradinaru et al., PREBREAKDOWN AND BREAKDOWN EFFECTS IN ALGAN GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/, Applied physics letters, 72(12), 1998, pp. 1475-1477
Authors:
SUDARSHAN TS
LI CR
Citation: Ts. Sudarshan et Cr. Li, DIELECTRIC SURFACE FLASHOVER IN VACUUM - EXPERIMENTAL-DESIGN ISSUES, IEEE transactions on dielectrics and electrical insulation, 4(5), 1997, pp. 657-662
Authors:
SUDARSHAN TS
Citation: Ts. Sudarshan, ELECTRODE ARCHITECTURE RELATED TO SURFACE FLASHOVER OF SOLID DIELECTRICS IN VACUUM, IEEE transactions on dielectrics and electrical insulation, 4(4), 1997, pp. 374-381
Authors:
SUDARSHAN TS
GRADINARU G
KORONY G
GRADINARU SA
MITCHEL W
Citation: Ts. Sudarshan et al., HIGH-FIELD HIGH-TEMPERATURE PERFORMANCE OF SEMIINSULATING SILICON-CARBIDE, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1392-1395
Authors:
TIN CC
SONG Y
ISAACSSMITH T
MADANGARLI V
SUDARSHAN TS
Citation: Cc. Tin et al., METALORGANIC CHEMICAL-VAPOR DEPOSITION-GROWN ALN ON 6H-SIC FOR METAL-INSULATOR-SEMICONDUCTOR DEVICE APPLICATIONS, Journal of electronic materials, 26(3), 1997, pp. 212-216
Authors:
YU CC
JAGASIVAMANI V
KUMAR R
SUDARSHAN TS
Citation: Cc. Yu et al., NOVEL SYNTHESIS OF MOSI2 AND MOSI2-AL2O3 ULTRAFINE POWDERS, Materials science and technology, 13(11), 1997, pp. 887-892
Authors:
GRADINARU G
SUDARSHAN TS
GRADINARU SA
MITCHELL W
HOBGOOD HM
Citation: G. Gradinaru et al., ELECTRICAL-PROPERTIES OF HIGH-RESISTIVITY 6H-SIC UNDER HIGH TEMPERATURE HIGH FIELD STRESS/, Applied physics letters, 70(6), 1997, pp. 735-737
Authors:
YOO S
GROZA JR
SUDARSHAN TS
YAMAZAKI K
Citation: S. Yoo et al., DIFFUSION BONDING OF BORON-NITRIDE ON METAL SUBSTRATES BY PLASMA ACTIVATED SINTERING (PAS) PROCESS, Scripta materialia, 34(9), 1996, pp. 1383-1386
Authors:
SUDARSHAN TS
GRADINARU G
KORONY G
MITCHEL W
HOPKINS RH
Citation: Ts. Sudarshan et al., HIGH-FIELD ACTIVATION OF MICROPIPES IN HIGH-RESISTIVITY SILICON-CARBIDE, Journal of electronic materials, 25(5), 1996, pp. 893-898
Authors:
VANPATTEN PG
NOLL JD
MYRICK ML
LI CR
SUDARSHAN TS
Citation: Pg. Vanpatten et al., SPARK-GAP ATOMIC-EMISSION MICROSCOPY, Journal of physical chemistry, 100(9), 1996, pp. 3646-3651
Authors:
GRADINARU G
SUDARSHAN TS
Citation: G. Gradinaru et Ts. Sudarshan, SURFACE FILAMENTATION IN SEMIINSULATING SILICON, Journal of applied physics, 79(11), 1996, pp. 8557-8564
Authors:
MADANGARLI VP
KORONY G
GRADINARU G
SUDARSHAN TS
Citation: Vp. Madangarli et al., INFLUENCE OF CONTACT ARCHITECTURE ON THE HIGH-FIELD CHARACTERISTICS OF PLANAR SILICON STRUCTURES, I.E.E.E. transactions on electron devices, 43(5), 1996, pp. 793-799
Authors:
KHAN MA
CHEN O
SUDARSHAN TS
GRADINARU G
Citation: Ma. Khan et al., HIGH-FIELD FLASHOVER STRENGTH OF INTRINSIC GALLIUM NITRIDE AND ALUMINUM NITRIDE IN VACUUM, Applied physics letters, 69(2), 1996, pp. 254-256
Authors:
LI CR
SUDARSHAN TS
Citation: Cr. Li et Ts. Sudarshan, CHARACTERISTICS OF PREFLASHOVER LIGHT-EMISSION FROM DIELECTRIC SURFACES IN VACUUM, IEEE transactions on dielectrics and electrical insulation, 2(3), 1995, pp. 483-491
Authors:
SRIVATSAN TS
SUDARSHAN TS
Citation: Ts. Srivatsan et Ts. Sudarshan, THE TENSILE FRACTURE-BEHAVIOR OF CAST COPPER-LEAD ALLOYS, Journal of materials science letters, 14(12), 1995, pp. 864-868
Authors:
SRIVATSAN TS
SUDARSHAN TS
LAVERNIA EJ
Citation: Ts. Srivatsan et al., PROCESSING OF DISCONTINUOUSLY-REINFORCED METAL-MATRIX COMPOSITES BY RAPID SOLIDIFICATION, Progress in Materials Science, 39(4-5), 1995, pp. 317-409
Authors:
HARVEY DP
SUDARSHAN TS
Citation: Dp. Harvey et Ts. Sudarshan, EFFECT OF BETA-MN FORMATION ON THE IMPACT BEHAVIOR OF FE-29 MN-8 AL-1C-1.5 SI ALLOY, Zeitschrift fur Metallkunde, 86(6), 1995, pp. 434-440
Authors:
GRADINARU G
SUDARSHAN TS
Citation: G. Gradinaru et Ts. Sudarshan, BULK BREAKDOWN OF HIGH-FIELD SILICON-DIELECTRIC SYSTEMS, I.E.E.E. transactions on electron devices, 42(6), 1995, pp. 1156-1165