Authors:
Lazaro, M
Santamaria, I
Pantaleon, C
Sanchez, AM
Puente, AT
Fernandez, T
Citation: M. Lazaro et al., Smoothing the canonical piecewise-linear model: An efficient and derivablelarge-signal model for MESFET/HEMT transistors, IEEE CIRC-I, 48(2), 2001, pp. 184-192
Authors:
Sanchez, AM
Pacheco, FJ
Molina, SI
Stemmer, J
Aderhold, J
Graul, J
Citation: Am. Sanchez et al., Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy, MAT SCI E B, 80(1-3), 2001, pp. 299-303
Citation: Pr. Montero et Am. Sanchez, Plutonium contamination from accidental release or simply fallout: study of soils at Palomares (Spain), J ENV RAD, 55(2), 2001, pp. 157-165
Authors:
Sanchez, AM
Schreiber, GB
Bethel, J
McCurdy, PR
Glynn, SA
Williams, AE
Gilcher, R
Citation: Am. Sanchez et al., Prevalence, donation practices, and risk assessment of blood donors with hemochromatosis, J AM MED A, 286(12), 2001, pp. 1475-1481
Authors:
Sanchez, AM
Nouet, G
Ruterana, P
Pacheco, FJ
Molina, SI
Garcia, R
Citation: Am. Sanchez et al., A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111), APPL PHYS L, 79(22), 2001, pp. 3588-3590
Authors:
Sanchez, AM
Pacheco, FJ
Molina, SI
Garcia, R
Ruterana, P
Sanchez-Garcia, MA
Calleja, E
Citation: Am. Sanchez et al., Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy, APPL PHYS L, 78(18), 2001, pp. 2688-2690
Authors:
Sanchez, AM
Molina, SI
Pacheco, FJ
Garcia, R
Sanchez-Garcia, MA
Sanchez, FJ
Calleja, E
Citation: Am. Sanchez et al., Si doping effect on the defect structure in GaN/AlN/Si(111) heteroepitaxial systems, B S ESP CER, 39(4), 2000, pp. 468-471
Citation: Mp. Perez et Am. Sanchez, Lean production and supplier relations: a survey of practices in the Aragonese automotive industry, TECHNOVATIO, 20(12), 2000, pp. 665-676
Authors:
Stemmer, J
Fedler, F
Klausing, H
Mistele, D
Rotter, T
Semchinova, O
Aderhold, J
Sanchez, AM
Pacheco, FJ
Molina, SI
Fehrer, M
Hommel, D
Graul, J
Citation: J. Stemmer et al., High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy, J CRYST GR, 216(1-4), 2000, pp. 15-20
Authors:
Congdon, NG
Dreyfuss, ML
Christian, P
Navitsky, RC
Sanchez, AM
Wu, LSF
Khatry, SK
Thapa, MD
Humphrey, J
Hazelwood, D
West, KP
Citation: Ng. Congdon et al., Responsiveness of dark-adaptation threshold to vitamin A and beta-carotenesupplementation in pregnant and lactating women in Nepal, AM J CLIN N, 72(4), 2000, pp. 1004-1009
Authors:
Garcia, JA
Puente, AT
Sanchez, AM
Santamaria, I
Lazaro, M
Pantaleon, CJ
Pedro, JC
Citation: Ja. Garcia et al., Modeling MESFETs and HEMTs intermodulation distortion behavior using a generalized radial basis function network, INT J RF MI, 9(3), 1999, pp. 261-276
Citation: Am. Sanchez et Pr. Montero, Simplifying data fitting using branching ratios as constraints in alpha spectrometry, NUCL INST A, 420(3), 1999, pp. 481-488
Citation: Jc. Mejia et al., Reproductive pattern variation in two Mexican populations of Artemia franciscana (Branchiopoda : Anostraca) and comparison with the San Francisco Bay(California) population., REV BIOL TR, 47, 1999, pp. 99-104
Authors:
Sanchez-Garcia, MA
Naranjo, FB
Pau, JL
Jimenez, A
Calleja, E
Munoz, E
Molina, SI
Sanchez, AM
Pacheco, FJ
Garcia, R
Citation: Ma. Sanchez-garcia et al., Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE, PHYS ST S-A, 176(1), 1999, pp. 447-452