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Results: 1-3 |
Results: 3
Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates
Authors: Galiev, GB Mokerov, VG Saraikin, VV Slepnev, YV Shagimuratov, GI Imamov, RM Pashaev, EM
Citation: Gb. Galiev et al., Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates, TECH PHYS, 46(4), 2001, pp. 411-416
A study of the electrical and optical properties of Si delta-doped GaAs layers grown by MBE on a (111)A GaAs surface misoriented toward the [2(1)over-bar(1)over-bar] direction
Authors: Galiev, GB Mokerov, VG Lyapin, ER Saraikin, VV Khabarov, YV
Citation: Gb. Galiev et al., A study of the electrical and optical properties of Si delta-doped GaAs layers grown by MBE on a (111)A GaAs surface misoriented toward the [2(1)over-bar(1)over-bar] direction, SEMICONDUCT, 35(4), 2001, pp. 409-414
Investigation of distribution and redistribution of silicon in thin doped gallium-arsenide layers grown by molecular beam epitaxy on substrates with (100), (111)Ga, and (111)As orientations
Authors: Galiev, GB Kaminskii, VE Mokerov, VG Nevolin, VK Saraikin, VV Slepnev, YV
Citation: Gb. Galiev et al., Investigation of distribution and redistribution of silicon in thin doped gallium-arsenide layers grown by molecular beam epitaxy on substrates with (100), (111)Ga, and (111)As orientations, SEMICONDUCT, 34(7), 2000, pp. 741-745
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