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Results: 1-8 |
Results: 8
Annealing behaviour of foreign atom incorporated Co-silicides formed by MEVVA implantation into SiO2/Si and Si3N4/Si structures
Authors: Zhang, YW Zhang, TH Lu, DT Maximov, IA Sarwe, EL Graczyk, M Whitlow, HJ
Citation: Yw. Zhang et al., Annealing behaviour of foreign atom incorporated Co-silicides formed by MEVVA implantation into SiO2/Si and Si3N4/Si structures, NUCL INST B, 175, 2001, pp. 737-743
Scanning probe microscopy characterisation of masked low energy implanted nanometer structures
Authors: Winzell, T Anand, S Maximov, I Sarwe, EL Graczyk, M Montelius, L Whitlow, HJ
Citation: T. Winzell et al., Scanning probe microscopy characterisation of masked low energy implanted nanometer structures, NUCL INST B, 173(4), 2001, pp. 447-454
Nanoimprint- and UV-lithography: Mix&Match process for fabrication of interdigitated nanobiosensors
Authors: Montelius, L Heidari, B Graczyk, M Maximov, I Sarwe, EL Ling, TGI
Citation: L. Montelius et al., Nanoimprint- and UV-lithography: Mix&Match process for fabrication of interdigitated nanobiosensors, MICROEL ENG, 53(1-4), 2000, pp. 521-524
Novel approach for lateral current confinement in vertical resonant tunneling devices
Authors: Gustafson, B Carlsson, N Fukui, T Litwin, A Maximov, I Sarwe, EL Seifert, W Wernersson, LE Samuelson, L
Citation: B. Gustafson et al., Novel approach for lateral current confinement in vertical resonant tunneling devices, JPN J A P 1, 38(1B), 1999, pp. 343-346
Large scale nanolithography using nanoimprint lithography
Authors: Heidari, B Maximov, I Sarwe, EL Montelius, L
Citation: B. Heidari et al., Large scale nanolithography using nanoimprint lithography, J VAC SCI B, 17(6), 1999, pp. 2961-2964
High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part II: sputtering yield transients, the approach to high-fluence equilibrium
Authors: Zhang, YW Winzell, T Zhang, TH Maximov, IA Sarwe, EL Graczyk, M Montelius, L Whitlow, HJ
Citation: Yw. Zhang et al., High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part II: sputtering yield transients, the approach to high-fluence equilibrium, NUCL INST B, 159(3), 1999, pp. 133-141
High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part I: formationof thin silicide surface films
Authors: Zhang, YW Winzell, T Zhang, TH Andersson, M Maximov, IA Sarwe, EL Graczyk, M Montelius, L Whitlow, HJ
Citation: Yw. Zhang et al., High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part I: formationof thin silicide surface films, NUCL INST B, 159(3), 1999, pp. 142-157
High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part III: heavy-fluence Co bombardment induced surface topography development
Authors: Zhang, YW Winzell, T Zhang, TH Maximov, IA Sarwe, EL Graczyk, M Montelius, L Whitlow, HJ
Citation: Yw. Zhang et al., High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part III: heavy-fluence Co bombardment induced surface topography development, NUCL INST B, 159(3), 1999, pp. 158-165
Risultati: 1-8 |