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Results: 1-12 |
Results: 12
Contrast enhancement based on acid equilibrium for chemically amplified resists
Authors: Nakazawa, K Sasago, M
Citation: K. Nakazawa et M. Sasago, Contrast enhancement based on acid equilibrium for chemically amplified resists, JPN J A P 1, 39(4A), 2000, pp. 1944-1950
Dissolution rate analysis of ArF resists based on the percolation model
Authors: Yamaguchi, A Takahashi, M Kishimura, S Matsuzawa, N Ohfuji, T Tanaka, T Tagawa, S Sasago, M
Citation: A. Yamaguchi et al., Dissolution rate analysis of ArF resists based on the percolation model, JPN J A P 1, 38(7A), 1999, pp. 4033-4040
Atomic force microscopy study on the dissolution processes of chemically amplified resists for KrF excimer laser lithography
Authors: Kanzaki, K Ohfuji, T Sasago, M Tagawa, S
Citation: K. Kanzaki et al., Atomic force microscopy study on the dissolution processes of chemically amplified resists for KrF excimer laser lithography, JPN J A P 1, 38(5A), 1999, pp. 2997-3000
Approach to next-generation optical lithography
Authors: Nakazawa, K Onodera, T Sasago, M
Citation: K. Nakazawa et al., Approach to next-generation optical lithography, JPN J A P 1, 38(5A), 1999, pp. 3001-3002
Aberration tolerance for 130 nm lithography from viewpoint of process latitude
Authors: Saito, T Watanabe, H Sasago, M
Citation: T. Saito et al., Aberration tolerance for 130 nm lithography from viewpoint of process latitude, JPN J A P 1, 38(12B), 1999, pp. 7017-7021
Design concepts of single-layer resists for vacuum ultraviolet lithography
Authors: Kishimura, S Katsuyama, A Sasago, M Shirai, M Tsunooka, M
Citation: S. Kishimura et al., Design concepts of single-layer resists for vacuum ultraviolet lithography, JPN J A P 1, 38(12B), 1999, pp. 7103-7108
Challenges to 0.1 mu m resolution capability in ArF single layer resist process with weak resolution enhancement techniques
Authors: Takahashi, M Kishimura, S Ohfuji, T Sasago, M
Citation: M. Takahashi et al., Challenges to 0.1 mu m resolution capability in ArF single layer resist process with weak resolution enhancement techniques, JPN J A P 1, 37(12B), 1998, pp. 6723-6728
Study of the bottom antireflective coating process using a high-transparency resist for ArF excimer laser lithography
Authors: Kishimura, S Takahashi, M Ohfuji, T Sasago, M
Citation: S. Kishimura et al., Study of the bottom antireflective coating process using a high-transparency resist for ArF excimer laser lithography, JPN J A P 1, 37(12B), 1998, pp. 6729-6733
Sub-0.1-mu m-pattern fabrication using a 193-nm top surface imaging (TSI) process
Authors: Mori, S Kuhara, K Morisawa, T Matsuzawa, N Kaimoto, Y Endo, M Matsuo, T Sasago, M
Citation: S. Mori et al., Sub-0.1-mu m-pattern fabrication using a 193-nm top surface imaging (TSI) process, JPN J A P 1, 37(12B), 1998, pp. 6734-6738
Nonhomogeneous pattern formation in the dissolution processes of novolak-diazonaphthoquinone resists
Authors: Kanzaki, K Ohfuji, T Sasago, M Tagawa, S
Citation: K. Kanzaki et al., Nonhomogeneous pattern formation in the dissolution processes of novolak-diazonaphthoquinone resists, JPN J A P 1, 37(11), 1998, pp. 6266-6269
Reduction of line edge roughness in the top surface imaging process
Authors: Mori, S Morisawa, T Matsuzawa, N Kaimoto, Y Endo, M Matsuo, T Kuhara, K Sasago, M
Citation: S. Mori et al., Reduction of line edge roughness in the top surface imaging process, J VAC SCI B, 16(6), 1998, pp. 3739-3743
Pattern collapse in the top surface imaging process after dry development
Authors: Mori, S Morisawa, T Matsuzawa, N Kaimoto, Y Endo, M Matsuo, T Kuhara, K Sasago, M
Citation: S. Mori et al., Pattern collapse in the top surface imaging process after dry development, J VAC SCI B, 16(6), 1998, pp. 3744-3747
Risultati: 1-12 |