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Results: 1-9 |
Results: 9
Comparison of the effects of H-2 and D-2 plasma exposure on GaAs MESFETs
Authors: Luo, B Ren, F Lee, KP Pearton, SJ Wu, CS Johnson, D Sasserath, JN
Citation: B. Luo et al., Comparison of the effects of H-2 and D-2 plasma exposure on GaAs MESFETs, SOL ST ELEC, 45(9), 2001, pp. 1625-1638
Understanding of etch mechanism and etch depth distribution in inductivelycoupled plasma etching of GaAs
Authors: Lee, JW Jeon, MH Devre, M Mackenzie, KD Johnson, D Sasserath, JN Pearton, SJ Ren, F Shul, RJ
Citation: Jw. Lee et al., Understanding of etch mechanism and etch depth distribution in inductivelycoupled plasma etching of GaAs, SOL ST ELEC, 45(9), 2001, pp. 1683-1686
Utilization of optical emission spectroscopy for end-point detection during AlGaAs/GaAs and InGaP/GaAs etching in BCl3/N-2 inductively coupled plasmas
Authors: Lee, JW Jeon, MH Cho, GS Yim, HC Chang, SK Kim, KK Devre, M Lee, YS Westerman, R Johnson, D Sasserath, JN Pearton, SJ
Citation: Jw. Lee et al., Utilization of optical emission spectroscopy for end-point detection during AlGaAs/GaAs and InGaP/GaAs etching in BCl3/N-2 inductively coupled plasmas, J ELCHEM SO, 148(9), 2001, pp. G472-G474
Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas
Authors: Lee, JW Devre, MW Reelfs, BH Johnson, D Sasserath, JN Clayton, F Hays, D Pearton, SJ
Citation: Jw. Lee et al., Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas, J VAC SCI A, 18(4), 2000, pp. 1220-1224
Selective dry etching of InGaP over GaAs in inductively coupled plasmas
Authors: Leerungnawarat, P Cho, H Hays, DC Lee, JW Devre, MW Reelfs, BH Johnson, D Sasserath, JN Abernathy, CR Pearton, SJ
Citation: P. Leerungnawarat et al., Selective dry etching of InGaP over GaAs in inductively coupled plasmas, J ELEC MAT, 29(5), 2000, pp. 586-590
High selectivity Inductively Coupled Plasma etching of GaAs over InGaP
Authors: Hays, DC Cho, H Lee, JW Devre, MW Reelfs, BH Johnson, D Sasserath, JN Meyer, LC Toussaint, E Ren, F Abernathy, CR Pearton, SJ
Citation: Dc. Hays et al., High selectivity Inductively Coupled Plasma etching of GaAs over InGaP, APPL SURF S, 156(1-4), 2000, pp. 76-84
Low temperature silicon nitride and silicon dioxide film processing by inductively coupled plasma chemical vapor deposition
Authors: Lee, JW Mackenzie, KD Johnson, D Sasserath, JN Pearton, SJ Ren, F
Citation: Jw. Lee et al., Low temperature silicon nitride and silicon dioxide film processing by inductively coupled plasma chemical vapor deposition, J ELCHEM SO, 147(4), 2000, pp. 1481-1486
905 nm wavelength laser as a means for in situ end-point detection of dry etching of AlxGa1-xAs on GaAs
Authors: Lee, JW Westerman, R Mackenzie, KD Donohue, JF Johnson, D Sasserath, JN Liddane, K Pearton, SJ
Citation: Jw. Lee et al., 905 nm wavelength laser as a means for in situ end-point detection of dry etching of AlxGa1-xAs on GaAs, EL SOLID ST, 2(12), 1999, pp. 640-641
GaAs/InGaP selective etching in BCl3/SF6 high-density plasmas
Authors: Hays, DC Cho, H Lee, JW Devre, MW Reelfs, BH Johnson, D Sasserath, JN Meyer, LC Toussaint, E Ren, F Pearton, SJ
Citation: Dc. Hays et al., GaAs/InGaP selective etching in BCl3/SF6 high-density plasmas, EL SOLID ST, 2(11), 1999, pp. 587-588
Risultati: 1-9 |