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Results: 1-8 |
Results: 8
Far-infrared intersubband absorption in p-type GaAs/AlxGa1-xAs single heterojunctions under uniaxial compression - art. no. 195308
Authors: Kolokolov, KI Beneslavski, SD Minina, NY Savin, AM
Citation: Ki. Kolokolov et al., Far-infrared intersubband absorption in p-type GaAs/AlxGa1-xAs single heterojunctions under uniaxial compression - art. no. 195308, PHYS REV B, 6319(19), 2001, pp. 5308
Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling
Authors: Savin, AM Prunnila, M Kivinen, PP Pekola, JP Ahopelto, J Manninen, AJ
Citation: Am. Savin et al., Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling, APPL PHYS L, 79(10), 2001, pp. 1471-1473
Piezoelectric effect and the long-term resistance relaxations induced by uniaxial compression in p-GaAs/AlxGa1-xAs heterostructures
Authors: Kravchenko, VN Minina, NY Savin, AM Hansen, OP
Citation: Vn. Kravchenko et al., Piezoelectric effect and the long-term resistance relaxations induced by uniaxial compression in p-GaAs/AlxGa1-xAs heterostructures, J EXP TH PH, 91(6), 2000, pp. 1250-1260
Negative and persistent photoconductivity in p-type Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As heterostructures under uniaxial stress
Authors: Kraak, W Minina, N Savin, AM Spangenberg, T Hansen, OP Sorensen, CB
Citation: W. Kraak et al., Negative and persistent photoconductivity in p-type Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As heterostructures under uniaxial stress, HIGH PR RES, 18(1-6), 2000, pp. 57-62
Effect of external uniaxial stress on the electronic properties and symmetry of p-GaAs/AlXGa1-XAs quantum wells
Authors: Kolokolov, KI Savin, AM Beneslavski, SD Minina, NY Hansen, OP
Citation: Ki. Kolokolov et al., Effect of external uniaxial stress on the electronic properties and symmetry of p-GaAs/AlXGa1-XAs quantum wells, HIGH PR RES, 18(1-6), 2000, pp. 69-74
Stress induced anisotropy of Fermi surface in p-GaAs/AlGaAs quantum wells
Authors: Kolokolov, KI Savin, AM Hansen, OP Beneslavski, SD Minina, NY
Citation: Ki. Kolokolov et al., Stress induced anisotropy of Fermi surface in p-GaAs/AlGaAs quantum wells, PHYS ST S-B, 211(1), 1999, pp. 507-512
Mobility anisotropy of two-dimensional hole gases in (001)GaAs/Al0.5Ga0.5As heterostructures and the influence of uniaxial compression
Authors: Savin, AM Soerensens, CB Hansen, OP Minina, NY Henini, M
Citation: Am. Savin et al., Mobility anisotropy of two-dimensional hole gases in (001)GaAs/Al0.5Ga0.5As heterostructures and the influence of uniaxial compression, SEMIC SCI T, 14(7), 1999, pp. 632-636
Energy spectrum and topology evolution of the Fermi surface of two-dimensional holes in GaAs/Al0.5Ga0.5As heterostructures under uniaxial compression: Theory and experiment
Authors: Kolokolov, KI Savin, AM Beneslavski, SD Minina, NY Hansen, OP
Citation: Ki. Kolokolov et al., Energy spectrum and topology evolution of the Fermi surface of two-dimensional holes in GaAs/Al0.5Ga0.5As heterostructures under uniaxial compression: Theory and experiment, PHYS REV B, 59(11), 1999, pp. 7537-7545
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