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Results:
1-9
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Results: 9
Authors:
Bigo, S
Idler, W
Scavennec, A
Du Mouza, L
Citation: S. Bigo et al., Road to ultra-high-capacity transmission, ALCATEL TEL, (3), 2001, pp. 177-179
Authors:
Scavennec, A
Citation: A. Scavennec, Introduction of InP high speed electronics into optical fiber transmissionsystems and current technological limits, MICROEL REL, 41(9-10), 2001, pp. 1563-1566
Authors:
Scavennec, A
Giraudet, L
Citation: A. Scavennec et L. Giraudet, Optical photodetectors, SP S PHOTON, 4, 2001, pp. 117-150
Authors:
Gautier-Levine, A
Chevalier, S
Post, G
Scavennec, A
Citation: A. Gautier-levine et al., Output conductance dispersion and drain current transients in InP-HFETs: observations and equivalent circuit model, SOL ST ELEC, 44(9), 2000, pp. 1563-1568
Authors:
Cavassilas, N
Aniel, F
Boucaud, P
Adde, R
Maher, H
Decobert, J
Scavennec, A
Citation: N. Cavassilas et al., Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor, J APPL PHYS, 87(5), 2000, pp. 2548-2552
Authors:
Gautier-Levine, A
Teissier, R
Nezzari, A
Rao, E
Decobert, J
Pelouard, JL
Scavennec, A
Citation: A. Gautier-levine et al., Impact ionization in InAlAs/InP single channel heterojunction field effecttransistors, JPN J A P 2, 38(5B), 1999, pp. L560-L562
Authors:
Bourguiga, R
Sik, H
Scavennec, A
Citation: R. Bourguiga et al., Surface passivation of composition graded base in GaAlAs/GaInP/GaAs heterojunction bipolar transistor, EPJ-APPL PH, 6(3), 1999, pp. 299-301
Authors:
Maher, H
Decobert, J
Falcou, A
Le Pallec, M
Post, G
Nissim, YI
Scavennec, A
Citation: H. Maher et al., A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications, IEEE DEVICE, 46(1), 1999, pp. 32-37
Authors:
Bourguiga, R
Sik, H
Scavennec, A
Citation: R. Bourguiga et al., Investigation on base surface recombination in self passivated GaAlAs/GaInP/GaAs heterojunction bipolar transistor, EPJ-APPL PH, 4(1), 1998, pp. 27-29
Risultati:
1-9
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