AAAAAA
Results:
1-8
|
Results: 8
Authors:
Schaepkens, M
Martini, I
Sanjuan, EA
Li, X
Oehrlein, GS
Perry, WL
Anderson, HM
Citation: M. Schaepkens et al., Gas-phase studies in inductively coupled fluorocarbon plasmas, J VAC SCI A, 19(6), 2001, pp. 2946-2957
Authors:
Schaepkens, M
Oehrlein, GS
Citation: M. Schaepkens et Gs. Oehrlein, A review of SiO2 etching studies in inductively coupled fluorocarbon plasmas, J ELCHEM SO, 148(3), 2001, pp. C211-C221
Authors:
Schaepkens, M
Oehrlein, GS
Cook, JM
Citation: M. Schaepkens et al., Effect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas, J VAC SCI B, 18(2), 2000, pp. 848-855
Authors:
Schaepkens, M
Rueger, NR
Beulens, JJ
Li, X
Standaert, TEFM
Matsuo, PJ
Oehrlein, GS
Citation: M. Schaepkens et al., Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing, J VAC SCI A, 17(6), 1999, pp. 3272-3280
Authors:
Li, X
Schaepkens, M
Oehrlein, GS
Ellefson, RE
Frees, LC
Mueller, N
Korner, N
Citation: X. Li et al., Mass spectrometric measurements on inductively coupled fluorocarbon plasmas: Positive ions, radicals and endpoint detection, J VAC SCI A, 17(5), 1999, pp. 2438-2446
Authors:
Rueger, NR
Doemling, MF
Schaepkens, M
Beulens, JJ
Standaert, TEFM
Oehrlein, GS
Citation: Nr. Rueger et al., Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor, J VAC SCI A, 17(5), 1999, pp. 2492-2502
Authors:
Schaepkens, M
Standaert, TEFM
Rueger, NR
Sebel, PGM
Oehrlein, GS
Cook, JM
Citation: M. Schaepkens et al., Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism, J VAC SCI A, 17(1), 1999, pp. 26-37
Authors:
Oehrlein, GS
Doemling, MF
Kastenmeier, BEE
Matsuo, PJ
Rueger, NR
Schaepkens, M
Standaert, TEFM
Citation: Gs. Oehrlein et al., Surface science issues in plasma etching, IBM J RES, 43(1-2), 1999, pp. 181-197
Risultati:
1-8
|