Authors: Mistele, D Adertold, J Klausing, H Rotter, T Semchinova, O Stemmer, J Uffmann, D Graul, J Eberhard, F Mayer, M Schauler, M Kamp, M Ahrens, C

Citation: D. Mistele et al., Influence of pre-etching on specific contact parameters for metal-GaN contacts, SEMIC SCI T, 14(7), 1999, pp. 637-641

Authors: Eberhard, F Schauler, M Deichsel, E Kirchner, C Unger, P

Citation: F. Eberhard et al., Comparison of the etching behavior of GaAs and GaN in a chemically-assisted ion-beam etching system, MICROEL ENG, 46(1-4), 1999, pp. 323-326

Authors: Prystawko, P Leszczynski, M Sliwinski, A Teisseyre, H Suski, T Bockowski, M Porowski, S Domagala, J Kirchner, C Pelzmann, A Schauler, M Kamp, M

Citation: P. Prystawko et al., Epitaxy of ternary nitrides on GaN single crystals, J CRYST GR, 199, 1999, pp. 1061-1065

Authors: Schauler, M Eberhard, F Kirchner, C Schwegler, V Pelzmann, A Kamp, M Ebeling, KJ Bertram, F Riemann, T Christen, J Prystawko, P Leszczynski, M Grzegory, I Porowski, S

Citation: M. Schauler et al., Dry etching of GaN substrates for high-quality homoepitaxy, APPL PHYS L, 74(8), 1999, pp. 1123-1125