ACNP - Italian Periodicals Catalogue

AAAAAA

ITA
ENG

Results: 1-11 |

Results: 11

Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers

Authors: Schenk, HPD Leroux, M de Mierry, P Laugt, M Omnes, F Gibart, P

Citation: Hpd. Schenk et al., Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers, MAT SCI E B, 82(1-3), 2001, pp. 163-166

Guided elastic waves in GaN-on-sapphire

Authors: Camou, S Pastureaud, T Schenk, HPD Ballandras, S Laude, V

Citation: S. Camou et al., Guided elastic waves in GaN-on-sapphire, ELECTR LETT, 37(16), 2001, pp. 1053-1055

Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.

Authors: de Mierry, P Beaumont, B Feltin, E Schenk, HPD Gibart, P Jomard, F Rushworth, S Smith, L Odedra, R

Citation: P. De Mierry et al., Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN., MRS I J N S, 5(8), 2000, pp. 1-3

Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck-Shockley relation

Authors: Schenk, HPD Leroux, M de Mierry, P

Citation: Hpd. Schenk et al., Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck-Shockley relation, J APPL PHYS, 88(3), 2000, pp. 1525-1534

Growth of atomically smooth AlN films with a 5 : 4 coincidence interface on Si(111) by MBE

Authors: Schenk, HPD Kaiser, U Kipshidze, GD Fissel, A Krausslich, J Hobert, H Schulze, J Richter, W

Citation: Hpd. Schenk et al., Growth of atomically smooth AlN films with a 5 : 4 coincidence interface on Si(111) by MBE, MAT SCI E B, 59(1-3), 1999, pp. 84-87

The effect of growth condition on the structure of 2H-AIN films deposited on Si(111) by plasma-assisted molecular beam epitaxy

Authors: Kaiser, U Brown, PD Khodos, I Humphreys, CJ Schenk, HPD Richter, W

Citation: U. Kaiser et al., The effect of growth condition on the structure of 2H-AIN films deposited on Si(111) by plasma-assisted molecular beam epitaxy, J MATER RES, 14(5), 1999, pp. 2036-2042

Structure of 2H-AlN films deposited on Si(111) substrate by molecular beamepitaxy

Authors: Kaiser, U Khodos, I Broun, PD Schenk, HPD Richter, W

Citation: U. Kaiser et al., Structure of 2H-AlN films deposited on Si(111) substrate by molecular beamepitaxy, IAN FIZ, 63(7), 1999, pp. 1358-1364

Spectroscopic studies of InGaN ternary alloys

Authors: Schenk, HPD de Mierry, P Omnes, F Gibart, P

Citation: Hpd. Schenk et al., Spectroscopic studies of InGaN ternary alloys, PHYS ST S-A, 176(1), 1999, pp. 307-311

Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxy

Authors: Schenk, HPD Kipshidze, GD Lebedev, VB Shokhovets, S Goldhahn, R Krausslich, J Fissel, A Richter, W

Citation: Hpd. Schenk et al., Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 359-364

Investigation of two-dimensional growth of AlN(0 0 0 1) on Si(1 1 1) by plasma-assisted molecular beam epitaxy

Authors: Schenk, HPD Kipshidze, GD Kaiser, U Fissel, A Krausslich, J Schulze, J Richter, W

Citation: Hpd. Schenk et al., Investigation of two-dimensional growth of AlN(0 0 0 1) on Si(1 1 1) by plasma-assisted molecular beam epitaxy, J CRYST GR, 200(1-2), 1999, pp. 45-54

Indium incorporation above 800 degrees C during metalorganic vapor phase epitaxy of InGaN

Authors: Schenk, HPD de Mierry, P Laugt, M Omnes, F Leroux, M Beaumont, B Gibart, P

Citation: Hpd. Schenk et al., Indium incorporation above 800 degrees C during metalorganic vapor phase epitaxy of InGaN, APPL PHYS L, 75(17), 1999, pp. 2587-2589

Risultati: 1-11 |