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Results:
1-8
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Results: 8
Authors:
Brown, JD
Li, JZ
Srinivasan, P
Matthews, J
Schetzina, JF
Citation: Jd. Brown et al., Solar-blind AlGaN heterostructure photodiodes, MRS I J N S, 5(9), 2000, pp. 1-7
Authors:
Brown, JD
Boney, J
Matthews, J
Srinivasan, P
Schetzina, JF
Nohava, T
Yang, W
Krishnankutty, S
Citation: Jd. Brown et al., UV-specific (320-365 nm) digital camera based on a 128x128 focal plane array of GaN/AlGaN p-i-n photodiodes, MRS I J N S, 5(6), 2000, pp. 1-12
Authors:
Brown, JD
Matthews, J
Harney, S
Boney, J
Schetzina, JF
Benson, JD
Dang, KV
Nohava, T
Yang, W
Krishnankutty, S
Citation: Jd. Brown et al., High-sensitivity visible-blind AlGaN photodiodes and photodiode arrays, MRS I J N S, 5, 2000, pp. NIL_34-NIL_39
Authors:
Yang, Y
Mishra, S
Cerrina, F
Xu, SH
Cruguel, H
Lapeyre, GJ
Schetzina, JF
Citation: Y. Yang et al., Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces, J VAC SCI B, 17(4), 1999, pp. 1884-1890
Authors:
Johnson, MAL
Yu, ZH
Brown, JD
El-Masry, NA
Cook, JW
Schetzina, JF
Citation: Mal. Johnson et al., Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride, J ELEC MAT, 28(3), 1999, pp. 295-300
Authors:
Young, AP
Schafer, J
Brillson, LJ
Yang, Y
Xu, SH
Cruguel, H
Lapeyre, GJ
Johnson, MAL
Schetzina, JF
Citation: Ap. Young et al., Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy, J ELEC MAT, 28(3), 1999, pp. 308-313
Authors:
Guha, S
Bojarczuk, NA
Johnson, MAL
Schetzina, JF
Citation: S. Guha et al., Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2, APPL PHYS L, 75(4), 1999, pp. 463-465
Authors:
Yu, ZH
Johnson, MAL
Brown, JD
El-Masry, NA
Cook, JW
Schetzina, JF
Citation: Zh. Yu et al., Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire, J CRYST GR, 195(1-4), 1998, pp. 333-339
Risultati:
1-8
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