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Results: 1-16 |
Results: 16
Work function measurements on indium tin oxide films
Authors: Schlaf, R Murata, H Kafafi, ZH
Citation: R. Schlaf et al., Work function measurements on indium tin oxide films, J ELEC SPEC, 120(1-3), 2001, pp. 149-154
Determination of the orbital lineup at reactive organic semiconductor interfaces using photoemission spectroscopy
Authors: Schlaf, R Merritt, CD Picciolo, LC Kafafi, ZH
Citation: R. Schlaf et al., Determination of the orbital lineup at reactive organic semiconductor interfaces using photoemission spectroscopy, J APPL PHYS, 90(4), 2001, pp. 1903-1910
Investigation of band bending and charging phenomena in frontier orbital alignment measurements of para-quaterphenyl thin films grown on highly oriented pyrolytic graphite and SnS2
Authors: Schroeder, PG Nelson, MW Parkinson, BA Schlaf, R
Citation: Pg. Schroeder et al., Investigation of band bending and charging phenomena in frontier orbital alignment measurements of para-quaterphenyl thin films grown on highly oriented pyrolytic graphite and SnS2, SURF SCI, 459(3), 2000, pp. 349-364
Determination of interface dipole and band bending at the Ag/tris (8-hydroxyquinolinato) gallium organic Schottky contact by ultraviolet photoemission spectroscopy
Authors: Schlaf, R Schroeder, PG Nelson, MW Parkinson, BA Merritt, CD Crisafulli, LA Murata, H Kafafi, ZH
Citation: R. Schlaf et al., Determination of interface dipole and band bending at the Ag/tris (8-hydroxyquinolinato) gallium organic Schottky contact by ultraviolet photoemission spectroscopy, SURF SCI, 450(1-2), 2000, pp. 142-152
Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices
Authors: Kim, H Gilmore, CM Horwitz, JS Pique, A Murata, H Kushto, GP Schlaf, R Kafafi, ZH Chrisey, DB
Citation: H. Kim et al., Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices, APPL PHYS L, 76(3), 2000, pp. 259-261
HOMO/LUMO alignment at PTCDA/ZnPc and PTCDA/ClInPc heterointerfaces determined by combined UPS and XPS measurements
Authors: Schlaf, R Parkinson, BA Lee, PA Nebesny, KW Armstrong, NR
Citation: R. Schlaf et al., HOMO/LUMO alignment at PTCDA/ZnPc and PTCDA/ClInPc heterointerfaces determined by combined UPS and XPS measurements, J PHYS CH B, 103(15), 1999, pp. 2984-2992
Two-dimensional dopant profiling of an integrated circuit using bias-applied phase-imaging tapping mode atomic force microscopy
Authors: Nelson, MW Schroeder, PG Schlaf, R Parkinson, BA
Citation: Mw. Nelson et al., Two-dimensional dopant profiling of an integrated circuit using bias-applied phase-imaging tapping mode atomic force microscopy, EL SOLID ST, 2(9), 1999, pp. 475-477
Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biases
Authors: Nelson, MW Schroeder, PG Schlaf, R Parkinson, BA
Citation: Mw. Nelson et al., Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biases, J VAC SCI B, 17(4), 1999, pp. 1354-1360
Fermi level pinning on HF etched silicon surfaces investigated by photoelectron spectroscopy
Authors: Schlaf, R Hinogami, R Fujitani, M Yae, S Nakato, Y
Citation: R. Schlaf et al., Fermi level pinning on HF etched silicon surfaces investigated by photoelectron spectroscopy, J VAC SCI A, 17(1), 1999, pp. 164-169
Absence of final-state screening shifts in photoemission spectroscopy frontier orbital alignment measurements at organic/semiconductor interfaces
Authors: Schlaf, R Parkinson, BA Lee, PA Nebesny, KW Armstrong, NR
Citation: R. Schlaf et al., Absence of final-state screening shifts in photoemission spectroscopy frontier orbital alignment measurements at organic/semiconductor interfaces, SURF SCI, 420(1), 1999, pp. L122-L129
Observation of strong band bending in perylene tetracarboxylic dianhydridethin films grown on SnS2
Authors: Schlaf, R Schroeder, PG Nelson, MW Parkinson, BA Lee, PA Nebesny, KW Armstrong, NR
Citation: R. Schlaf et al., Observation of strong band bending in perylene tetracarboxylic dianhydridethin films grown on SnS2, J APPL PHYS, 86(3), 1999, pp. 1499-1509
Organic semiconductor interfaces: Discrimination between charging and bandbending related shifts in frontier orbital line-up measurements with photoemission spectroscopy
Authors: Schlaf, R Merritt, CD Crisafulli, LA Kafafi, ZH
Citation: R. Schlaf et al., Organic semiconductor interfaces: Discrimination between charging and bandbending related shifts in frontier orbital line-up measurements with photoemission spectroscopy, J APPL PHYS, 86(10), 1999, pp. 5678-5686
Band lineup of a SnS2/SnSe2/SnS2 semiconductor quantum well structure prepared by van der Waals epitaxy
Authors: Schlaf, R Pettenkofer, C Jaegermann, W
Citation: R. Schlaf et al., Band lineup of a SnS2/SnSe2/SnS2 semiconductor quantum well structure prepared by van der Waals epitaxy, J APPL PHYS, 85(9), 1999, pp. 6550-6556
Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule
Authors: Schlaf, R Lang, O Pettenkofer, C Jaegermann, W
Citation: R. Schlaf et al., Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule, J APPL PHYS, 85(5), 1999, pp. 2732-2753
Spatially resolved dopant profiling of patterned Si wafers by bias-appliedphase-imaging tapping-mode atomic force microscopy
Authors: Nelson, MW Schroeder, PG Schlaf, R Parkinson, BA Almgren, CW Erickson, AN
Citation: Mw. Nelson et al., Spatially resolved dopant profiling of patterned Si wafers by bias-appliedphase-imaging tapping-mode atomic force microscopy, APPL PHYS L, 74(10), 1999, pp. 1421-1423
Photoemission spectroscopy of LiF coated Al and Pt electrodes
Authors: Schlaf, R Parkinson, BA Lee, PA Nebesny, KW Jabbour, G Kippelen, B Peyghambarian, N Armstrong, NR
Citation: R. Schlaf et al., Photoemission spectroscopy of LiF coated Al and Pt electrodes, J APPL PHYS, 84(12), 1998, pp. 6729-6736
Risultati: 1-16 |