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Results: 1-24 |
Results: 24
Excited-state magnetoluminescence of InAs/GaAs self-assembled quantum dots
Authors: Paskov, PP Holtz, PO Monemar, B Garcia, JM Schoenfeld, WV Petroff, PM
Citation: Pp. Paskov et al., Excited-state magnetoluminescence of InAs/GaAs self-assembled quantum dots, JPN J A P 1, 40(3B), 2001, pp. 1998-2001
Optical up-conversion processes in InAs quantum dots
Authors: Paskov, PP Holtz, PO Monemar, B Garcia, JM Schoenfeld, WV Petroff, PM
Citation: Pp. Paskov et al., Optical up-conversion processes in InAs quantum dots, JPN J A P 1, 40(3B), 2001, pp. 2080-2083
Carrier diffusion in the barrier enabling formation of charged excitons inInAs/GaAs quantum dots
Authors: Karlsson, KF Moskalenko, ES Holtz, PO Monemar, B Schoenfeld, WV Garcia, JM Petroff, PM
Citation: Kf. Karlsson et al., Carrier diffusion in the barrier enabling formation of charged excitons inInAs/GaAs quantum dots, ACT PHY P A, 100(3), 2001, pp. 387-395
Quantum dot lasers using high-Q microdisk cavities
Authors: Michler, P Kiraz, A Becher, C Zhang, LD Hu, E Imamoglu, A Schoenfeld, WV Petroff, PM
Citation: P. Michler et al., Quantum dot lasers using high-Q microdisk cavities, PHYS ST S-B, 224(3), 2001, pp. 797-801
Dynamics of excitons in single semiconductor quantum dots probed by time-resolved optical spectroscopy
Authors: Regelman, DV Dekel, E Gershoni, D Schoenfeld, WV Petroff, PM
Citation: Dv. Regelman et al., Dynamics of excitons in single semiconductor quantum dots probed by time-resolved optical spectroscopy, PHYS ST S-B, 224(2), 2001, pp. 343-348
Terahertz-frequency intraband absorption in semiconductor quantum dot molecules
Authors: Boucaud, P Gill, KS Williams, JB Sherwin, MS Schoenfeld, WV Petroff, PM
Citation: P. Boucaud et al., Terahertz-frequency intraband absorption in semiconductor quantum dot molecules, PHYS ST S-B, 224(2), 2001, pp. 443-446
Optical spectroscopy of single quantum dots at tunable positive, neutral, and negative charge states - art. no. 165301
Authors: Regelman, DV Dekel, E Gershoni, D Ehrenfreund, E Williamson, AJ Shumway, J Zunger, A Schoenfeld, WV Petroff, PM
Citation: Dv. Regelman et al., Optical spectroscopy of single quantum dots at tunable positive, neutral, and negative charge states - art. no. 165301, PHYS REV B, 6416(16), 2001, pp. 5301
Influence of excitation energy on charged exciton formation in self-assembled InAs single quantum dots - art. no. 085302
Authors: Moskalenko, ES Karlsson, KF Holtz, PO Monemar, B Schoenfeld, WV Garcia, JM Petroff, PM
Citation: Es. Moskalenko et al., Influence of excitation energy on charged exciton formation in self-assembled InAs single quantum dots - art. no. 085302, PHYS REV B, 6408(8), 2001, pp. 5302
Spectroscopy of strain-induced quantum dots in GaAs/AlxGa1-xAs quantum well structures - art. no. 205319
Authors: Schoenfeld, WV Metzner, C Letts, E Petroff, PM
Citation: Wv. Schoenfeld et al., Spectroscopy of strain-induced quantum dots in GaAs/AlxGa1-xAs quantum well structures - art. no. 205319, PHYS REV B, 6320(20), 2001, pp. 5319
Nonclassical radiation from a single self-assembled InAs quantum dot - art. no. 121312
Authors: Becher, C Kiraz, A Michler, P Imamoglu, A Schoenfeld, WV Petroff, PM Zhang, LD Hu, E
Citation: C. Becher et al., Nonclassical radiation from a single self-assembled InAs quantum dot - art. no. 121312, PHYS REV B, 6312(12), 2001, pp. 1312
Determination of strain fields and composition of self-organized quantum dots using x-ray diffraction - art. no. 035318
Authors: Kegel, R Metzger, TH Lorke, A Peisl, J Stangl, J Bauer, G Nordlund, K Schoenfeld, WV Petroff, PM
Citation: R. Kegel et al., Determination of strain fields and composition of self-organized quantum dots using x-ray diffraction - art. no. 035318, PHYS REV B, 6303(3), 2001, pp. 5318
Radiative lifetimes of single excitons in semiconductor quantum dots - manifestation of the spatial coherence effect
Authors: Dekel, E Regelman, DV Gershoni, D Ehrenfreund, E Schoenfeld, WV Petroff, PM
Citation: E. Dekel et al., Radiative lifetimes of single excitons in semiconductor quantum dots - manifestation of the spatial coherence effect, SOL ST COMM, 117(7), 2001, pp. 395-400
Hanle effect measurements of spin lifetimes in InAs self-assembled quantumdots
Authors: Epstein, RJ Fuchs, DT Schoenfeld, WV Petroff, PM Awschalom, DD
Citation: Rj. Epstein et al., Hanle effect measurements of spin lifetimes in InAs self-assembled quantumdots, APPL PHYS L, 78(6), 2001, pp. 733-735
Cavity-quantum electrodynamics using a single InAs quantum dot in a microdisk structure
Authors: Kiraz, A Michler, P Becher, C Gayral, B Imamoglu, A Zhang, LD Hu, E Schoenfeld, WV Petroff, PM
Citation: A. Kiraz et al., Cavity-quantum electrodynamics using a single InAs quantum dot in a microdisk structure, APPL PHYS L, 78(25), 2001, pp. 3932-3934
Temperature influence on optical charging of self-assembled InAs/GaAs semiconductor quantum dots
Authors: Karlsson, KF Moskalenko, ES Holtz, PO Monemar, B Schoenfeld, WV Garcia, JM Petroff, PM
Citation: Kf. Karlsson et al., Temperature influence on optical charging of self-assembled InAs/GaAs semiconductor quantum dots, APPL PHYS L, 78(19), 2001, pp. 2952-2954
Carrier-carrier correlations and their effect on optically excited single semiconductor quantum dots
Authors: Dekel, E Regelman, D Gershoni, D Ehrenfreund, E Schoenfeld, WV Petroff, PM
Citation: E. Dekel et al., Carrier-carrier correlations and their effect on optically excited single semiconductor quantum dots, PHYS ST S-B, 221(1), 2000, pp. 43-48
Cascade evolution and radiative recombination of quantum dot multiexcitonsstudied by time-resolved spectroscopy
Authors: Dekel, E Regelman, DV Gershoni, D Ehrenfreund, E Schoenfeld, WV Petroff, PM
Citation: E. Dekel et al., Cascade evolution and radiative recombination of quantum dot multiexcitonsstudied by time-resolved spectroscopy, PHYS REV B, 62(16), 2000, pp. 11038-11045
Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots
Authors: Paskov, PP Holtz, PO Monemar, B Garcia, JM Schoenfeld, WV Petroff, PM
Citation: Pp. Paskov et al., Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots, PHYS REV B, 62(11), 2000, pp. 7344-7349
A quantum dot single-photon turnstile device
Authors: Michler, P Kiraz, A Becher, C Schoenfeld, WV Petroff, PM Zhang, LD Hu, E Imamoglu, A
Citation: P. Michler et al., A quantum dot single-photon turnstile device, SCIENCE, 290(5500), 2000, pp. 2282
Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
Authors: Paskov, PP Holtz, PO Monemar, B Garcia, JM Schoenfeld, WV Petroff, PM
Citation: Pp. Paskov et al., Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots, APPL PHYS L, 77(6), 2000, pp. 812-814
Saturation of THz-frequency intraband absorption in InAs/GaAs quantum dot molecules
Authors: Boucaud, P Gill, KS Williams, JB Sherwin, MS Schoenfeld, WV Petroff, PM
Citation: P. Boucaud et al., Saturation of THz-frequency intraband absorption in InAs/GaAs quantum dot molecules, APPL PHYS L, 77(4), 2000, pp. 510-512
Terahertz-frequency electronic coupling in vertically coupled quantum dots
Authors: Boucaud, P Williams, JB Gill, KS Sherwin, MS Schoenfeld, WV Petroff, PM
Citation: P. Boucaud et al., Terahertz-frequency electronic coupling in vertically coupled quantum dots, APPL PHYS L, 77(26), 2000, pp. 4356-4358
Charge separation in coupled InAs quantum dots and strain-induced quantum dots
Authors: Schoenfeld, WV Lundstrom, T Petroff, PM Gershoni, D
Citation: Wv. Schoenfeld et al., Charge separation in coupled InAs quantum dots and strain-induced quantum dots, APPL PHYS L, 74(15), 1999, pp. 2194-2196
Metallization-induced damage in III-V semiconductors
Authors: Chen, CH Hu, EL Schoenfeld, WV Petroff, PM
Citation: Ch. Chen et al., Metallization-induced damage in III-V semiconductors, J VAC SCI B, 16(6), 1998, pp. 3354-3358
Risultati: 1-24 |