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Results: 1-17 |
Results: 17
Spontaneous Hall effect in MBE grown Fe layers on GaAs(311) and GaAs(331) substrates
Authors: Friedland, KJ Notzel, R Schonherr, HP Riedel, A Kostial, H Ploog, KH
Citation: Kj. Friedland et al., Spontaneous Hall effect in MBE grown Fe layers on GaAs(311) and GaAs(331) substrates, PHYSICA E, 10(1-3), 2001, pp. 442-446
Room-temperature spin injection from Fe into GaAs - art. no. 016601
Authors: Zhu, HJ Ramsteiner, M Kostial, H Wassermeier, M Schonherr, HP Ploog, KH
Citation: Hj. Zhu et al., Room-temperature spin injection from Fe into GaAs - art. no. 016601, PHYS REV L, 8701(1), 2001, pp. 6601-NIL_107
Diffusion and incorporation: shape evolution during overgrowth on structured substrates
Authors: Braun, W Kaganer, VM Trampert, A Schonherr, HP Gong, Q Notzel, R Daweritz, L Ploog, KH
Citation: W. Braun et al., Diffusion and incorporation: shape evolution during overgrowth on structured substrates, J CRYST GR, 227, 2001, pp. 51-55
Evolution of the surface morphology of Fe grown on GaAs (100), (311)A, and(331)A substrates by molecular beam epitaxy
Authors: Schonherr, HP Notzel, R Ma, WQ Ploog, KH
Citation: Hp. Schonherr et al., Evolution of the surface morphology of Fe grown on GaAs (100), (311)A, and(331)A substrates by molecular beam epitaxy, J APPL PHYS, 89(1), 2001, pp. 169-173
Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100)
Authors: Ma, WQ Notzel, R Trampert, A Ramsteiner, M Zhu, HJ Schonherr, HP Ploog, KH
Citation: Wq. Ma et al., Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100), APPL PHYS L, 78(9), 2001, pp. 1297-1299
Study of molecular-beam epitaxy growth on patterned GaAs (311)A substrateswith different mesa height
Authors: Gong, Q Notzel, R Schonherr, HP Ploog, KH
Citation: Q. Gong et al., Study of molecular-beam epitaxy growth on patterned GaAs (311)A substrateswith different mesa height, J CRYST GR, 220(1-2), 2000, pp. 23-29
Stable nonplanar surface formed on patterned GaAs (311)A substrate by molecular-beam epitaxy
Authors: Gong, Q Notzel, R Schonherr, HP Ploog, KH
Citation: Q. Gong et al., Stable nonplanar surface formed on patterned GaAs (311)A substrate by molecular-beam epitaxy, APPL PHYS L, 77(22), 2000, pp. 3538-3540
Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates
Authors: Niu, ZC Notzel, R Jahn, U Schonherr, HP Fricke, J Ploog, KH
Citation: Zc. Niu et al., Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates, J ELEC MAT, 28(1), 1999, pp. 1-5
Novel functionality by selective guidance of electrons in quantum wires onhighly uniform multiatomic step arrays on GaAs (331) A substrates
Authors: Friedland, KJ Schonherr, HP Notzel, R Ploog, KH
Citation: Kj. Friedland et al., Novel functionality by selective guidance of electrons in quantum wires onhighly uniform multiatomic step arrays on GaAs (331) A substrates, MICROEL ENG, 47(1-4), 1999, pp. 243-245
Exciton capture and losses in a stacked submicron array of sidewall quantum wires on patterned GaAs(311)A substrates
Authors: Jahn, U Notzel, R Ringling, J Schonherr, HP Grahn, HT Ploog, KH Runge, E
Citation: U. Jahn et al., Exciton capture and losses in a stacked submicron array of sidewall quantum wires on patterned GaAs(311)A substrates, PHYS REV B, 60(15), 1999, pp. 11038-11044
Selective control of electrons in quantum wires formed by highly uniform multiatomic step arrays on GaAs(331) substrates
Authors: Friedland, KJ Schonherr, HP Notzel, R Ploog, KH
Citation: Kj. Friedland et al., Selective control of electrons in quantum wires formed by highly uniform multiatomic step arrays on GaAs(331) substrates, PHYS REV L, 83(1), 1999, pp. 156-159
Photoluminescence polarization anisotropy in quasi-planar sidewall quantumwires on GaAs (311)A
Authors: Santos, PV Schonherr, HP Notzel, R Ploog, KH
Citation: Pv. Santos et al., Photoluminescence polarization anisotropy in quasi-planar sidewall quantumwires on GaAs (311)A, PHYS ST S-A, 175(1), 1999, pp. 33-37
Cathodoluminescence investigations of vertically stacked, sub-mu m arrays of sidewall quantum wires on patterned GaAs (311)A substrates
Authors: Jahn, U Notzel, R Fricke, J Schonherr, HP Kurth, T Heitmann, D Daweritz, L Grahn, HT Ploog, KH
Citation: U. Jahn et al., Cathodoluminescence investigations of vertically stacked, sub-mu m arrays of sidewall quantum wires on patterned GaAs (311)A substrates, MICROELEC J, 30(4-5), 1999, pp. 445-448
Uniform quantum wire and quantum dot arrays by atomic hydrogen assisted MBE on patterned high-index substrate: role of atomic hydrogen in natural self-faceting
Authors: Notzel, R Schonherr, HP Niu, ZC Daweritz, L Ploog, KH
Citation: R. Notzel et al., Uniform quantum wire and quantum dot arrays by atomic hydrogen assisted MBE on patterned high-index substrate: role of atomic hydrogen in natural self-faceting, J CRYST GR, 202, 1999, pp. 814-818
Patterned growth on GaAs (311)A substrates: Engineering of growth selectivity for lateral semiconductor nanostructures
Authors: Fricke, J Notzel, R Jahn, U Niu, ZC Schonherr, HP Ramsteiner, M Ploog, KH
Citation: J. Fricke et al., Patterned growth on GaAs (311)A substrates: Engineering of growth selectivity for lateral semiconductor nanostructures, J APPL PHYS, 86(5), 1999, pp. 2896-2900
Patterned growth on GaAs (311)A substrates: Dependence on mesa misalignment and sidewall slope and its application to coupled wire-dot arrays
Authors: Fricke, J Notzel, R Jahn, U Schonherr, HP Daweritz, L Ploog, KH
Citation: J. Fricke et al., Patterned growth on GaAs (311)A substrates: Dependence on mesa misalignment and sidewall slope and its application to coupled wire-dot arrays, J APPL PHYS, 85(7), 1999, pp. 3576-3581
Selective electroluminescence from a single stack of sidewall quantum wires on patterned GaAs (311)A substrates
Authors: Ma, WQ Notzel, R Ramsteiner, M Jahn, U Schonherr, HP Kostial, H Ploog, KH
Citation: Wq. Ma et al., Selective electroluminescence from a single stack of sidewall quantum wires on patterned GaAs (311)A substrates, APPL PHYS L, 75(13), 1999, pp. 1836-1838
Risultati: 1-17 |