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Results: 1-7 |
Results: 7

Authors: Pophristic, M Long, FH Schurman, M Ramer, J Ferguson, IT
Citation: M. Pophristic et al., Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire, PHYS ST S-B, 216(1), 1999, pp. 803-806

Authors: Tran, CA Karlicek, RF Brown, MG Eliashevich, I Gurary, A Schurman, M Stall, R
Citation: Ca. Tran et al., Mass production of high brightness blue and green LEDs by MOCVD, PHYS ST S-A, 176(1), 1999, pp. 91-98

Authors: Li, T Carrano, JC Campbell, JC Schurman, M Ferguson, I
Citation: T. Li et al., Analysis of external quantum efficiencies of GaN homojunction p-i-n ultraviolet photodetectors, IEEE J Q EL, 35(8), 1999, pp. 1203-1206

Authors: Asnin, VM Pollak, FH Ramer, J Schurman, M Ferguson, I
Citation: Vm. Asnin et al., High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope, APPL PHYS L, 75(9), 1999, pp. 1240-1242

Authors: Pophristic, M Long, FH Schurman, M Ramer, J Ferguson, IT
Citation: M. Pophristic et al., Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire, APPL PHYS L, 74(23), 1999, pp. 3519-3521

Authors: Bergmann, MJ Ozgur, U Casey, HC Muth, JF Chang, YC Kolbas, RM Rao, RA Eom, CB Schurman, M
Citation: Mj. Bergmann et al., Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer, APPL PHYS L, 74(21), 1999, pp. 3188-3190

Authors: Tran, CA Karlicek, RF Schurman, M Osinsky, A Merai, V Li, Y Eliashevich, I Brown, MG Nering, J Ferguson, I Stall, R
Citation: Ca. Tran et al., Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs, J CRYST GR, 195(1-4), 1998, pp. 397-400
Risultati: 1-7 |