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Schut, H
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Bronsveld, PM
de Hosson, JTM
Boerma, DO
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Citation: M. Stroebe et al., The traumatization of grief? A conceptual framework for understanding the trauma-bereavement interface, ISR J PSYCH, 38(3-4), 2001, pp. 185-201
Authors:
Hartman, CA
Hox, J
Mellenbergh, GJ
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Citation: Ca. Hartman et al., DSM-IV internal construct validity: When a taxonomy meets data, J CHILD PSY, 42(6), 2001, pp. 817-836
Authors:
Mohsen, M
Gomaa, EAH
Schut, H
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Citation: M. Mohsen et al., Positron annihilation lifetime studies of gas sorption and desorption in polyethylene and poly[1-(trimethylsilyl)-1-propyne], J APPL POLY, 80(7), 2001, pp. 970-974
Authors:
Kruseman, AC
van Veen, A
Schut, H
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Citation: Ac. Kruseman et al., Buried oxide and defects in oxygen implanted Si monitored by positron annihilation, J APPL PHYS, 90(3), 2001, pp. 1179-1187
Authors:
Galindo, RE
Van Veen, A
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Citation: Re. Galindo et al., Study of polymer/metal coating under stress using positron annihilation spectroscopy, ACT MATER, 48(18-19), 2000, pp. 4743-4747
Authors:
Schut, H
Escobar, GR
Kolar, ZI
van Veen, A
Clet, G
Citation: H. Schut et al., Positronium formation in NaY-zeolites studied by lifetime, positron beam Doppler broadening and 3-gamma detection techniques, RADIAT PH C, 58(5-6), 2000, pp. 715-718
Authors:
Rivera, A
de Nijs, JMM
Balk, P
van Veen, A
Schut, H
Alkemade, PFA
Citation: A. Rivera et al., Oxygen-related defects in the top silicon layer of SIMOX; the effect of thermal treatments, MAT SCI E B, 73(1-3), 2000, pp. 77-81
Citation: A. Van Veen et al., Depth-profiling of subsurface regions, interfaces and thin films, POSITRON BEAMS AND THEIR APPLICATIONS, 2000, pp. 191-225
Authors:
Inia, DK
Vredenberg, AM
Boerma, DO
Tichelaar, FD
Schut, H
van Veen, A
Citation: Dk. Inia et al., Microstructural investigation of iron nitride layers formed by low-temperature gaseous nitriding, J MATER RES, 14(6), 1999, pp. 2674-2679
Authors:
Fedorov, AV
van Veen, A
Schut, H
Rivera, A
Citation: Av. Fedorov et al., Removal of vacancy type clusters by low energy ion generated self-interstitials in crystalline silicon, NUCL INST B, 148(1-4), 1999, pp. 289-293
Authors:
van Veen, A
Schut, H
Fedorov, AV
Labohm, F
Neeft, EAC
Konings, RJM
Citation: A. Van Veen et al., The formation of microvoids in MgO by helium ion implantation and thermal annealing, NUCL INST B, 148(1-4), 1999, pp. 768-772