Authors: Sedky, S Witvrouw, A Saerens, A Van Houtte, P Poortmans, J Baert, K

Citation: S. Sedky et al., Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 degrees C, J MATER RES, 16(9), 2001, pp. 2607-2612

Authors: Sedky, S Witvrouw, A Bender, H Baert, K

Citation: S. Sedky et al., Experimental determination of the maximum post-process annealing temperature for standard CMOS wafers, IEEE DEVICE, 48(2), 2001, pp. 377-385

Authors: Witvrouw, A Van Steenkiste, F Maes, D Haspeslagh, L Van Gerwen, P De Moor, P Sedky, S Van Hoof, C de Vries, AC Verbist, A De Caussemaeker, A Parmentier, B Baert, K

Citation: A. Witvrouw et al., Why CMOS-integrated transducers? A review, MICROSYST T, 6(5), 2000, pp. 192-199

Authors: Sedky, S Fiorini, P Baert, K Hermans, L Mertens, R

Citation: S. Sedky et al., Characterization and optimization of infrared poly SiGe bolometers, IEEE DEVICE, 46(4), 1999, pp. 675-682

Authors: Sedky, S Fiorini, P Caymax, M Loreti, S Baert, K Hermans, L Mertens, R

Citation: S. Sedky et al., Structural and mechanical properties of polycrystalline silicon germanium for micromachining applications, J MICROEL S, 7(4), 1998, pp. 365-372