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Results: 1-9 |
Results: 9
Micropyretic synthesis of NiAl containing Ti and B
Authors: Dey, GK Arya, A Sekhar, JA
Citation: Gk. Dey et al., Micropyretic synthesis of NiAl containing Ti and B, J MATER RES, 15(1), 2000, pp. 63-75
Micropyretic synthesis studies of Ni-, Al-, Ti-, and Nb-containing alloys
Authors: Dey, GK Sekhar, JA
Citation: Gk. Dey et Ja. Sekhar, Micropyretic synthesis studies of Ni-, Al-, Ti-, and Nb-containing alloys, MET MAT T B, 30(2), 1999, pp. 171-188
Micropyretic synthesis of MoSi2 powders through an aluminothermic reaction
Authors: Fu, M Penumella, S Sekhar, JA
Citation: M. Fu et al., Micropyretic synthesis of MoSi2 powders through an aluminothermic reaction, J MATER RES, 14(5), 1999, pp. 2023-2028
Convective heating below 1000 degrees C
Authors: Jeddy, FH Jog, MA Sekhar, JA Markle, RD Sarvepalli, V Burada, R
Citation: Fh. Jeddy et al., Convective heating below 1000 degrees C, ADV MATER P, 156(4), 1999, pp. 213-215
Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN
Authors: Wilson, RG Zavada, JM Cao, XA Singh, RK Pearton, SJ Guo, HJ Pennycock, SJ Fu, M Sekhar, JA Scarvepalli, V Shu, RJ Han, J Rieger, DJ Zolper, JC Abernathy, CR
Citation: Rg. Wilson et al., Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN, J VAC SCI A, 17(4), 1999, pp. 1226-1229
Redistribution of implanted dopants in GaN
Authors: Cao, XA Wilson, RG Zolper, JC Pearton, SJ Han, J Shul, RJ Rieger, DJ Singh, RK Fu, M Scarvepalli, V Sekhar, JA Zavada, JM
Citation: Xa. Cao et al., Redistribution of implanted dopants in GaN, J ELEC MAT, 28(3), 1999, pp. 261-265
Activation annealing of Si-implanted GaN up to 1500 degrees C using a novel RTP technique
Authors: Fu, M Sarvepalli, V Singh, RK Abernathy, CR Cao, X Pearton, SJ Sekhar, JA
Citation: M. Fu et al., Activation annealing of Si-implanted GaN up to 1500 degrees C using a novel RTP technique, J ELEC MAT, 27(12), 1998, pp. 1329-1333
A novel technique for RTP annealing of compound semiconductors
Authors: Fu, M Sarvepalli, V Singh, RK Abernathy, CR Cao, X Pearton, SJ Sekhar, JA
Citation: M. Fu et al., A novel technique for RTP annealing of compound semiconductors, SOL ST ELEC, 42(12), 1998, pp. 2335-2340
Processing, microstructures, and properties of molybdenum aluminosilicide
Authors: Fu, M Sekhar, JA
Citation: M. Fu et Ja. Sekhar, Processing, microstructures, and properties of molybdenum aluminosilicide, J AM CERAM, 81(12), 1998, pp. 3205-3214
Risultati: 1-9 |