Authors:
Sekigawa, T
Oguir, K
Kochiyama, J
Miho, K
Citation: T. Sekigawa et al., Endurance test of oxidation-resistant CVD-SIC coating on C/C composites for space vehicle, MATER TRANS, 42(5), 2001, pp. 825-828
Authors:
Oguri, K
Sekigawa, T
Kochiyama, J
Miho, K
Citation: K. Oguri et al., Catalycity measurement of oxidation-resistant CVD-SiC coating on C/C composite for space vehicle, MATER TRANS, 42(5), 2001, pp. 856-861
Citation: M. Yamanaka et al., Effects of film quality of hydrogenated amorphous silicon grown by thermalchemical-vapor-depositon on subsequent in-situ hydrogenation processes, JPN J A P 1, 39(6A), 2000, pp. 3302-3307
Authors:
Ishida, Y
Takahashi, T
Okumura, H
Sekigawa, T
Yoshida, S
Citation: Y. Ishida et al., Elongated shaped Si island formation on 3C-SiC by chemical vapor deposition and its application to antiphase domain observation, JPN J A P 1, 38(6A), 1999, pp. 3470-3474
Authors:
Fukuda, K
Nagai, K
Sekigawa, T
Yoshida, S
Arai, K
Yoshikawa, M
Citation: K. Fukuda et al., Improvement of SiO2/4H-SiC interface using high-temperature hydrogen annealing at low pressure and vacuum annealing, JPN J A P 1, 38(4B), 1999, pp. 2306-2309
Authors:
Ishii, K
Suzuki, E
Kanemaru, S
Maeda, T
Tsutsumi, T
Nagai, K
Sekigawa, T
Hiroshima, H
Citation: K. Ishii et al., Fabrication of 40-150 nm gate length ultrathin n-MOSFETs using epitaxial layer transfer SOI wafers, JPN J A P 1, 38(4B), 1999, pp. 2492-2495
Authors:
Sakakibara, N
Notomi, A
Ogura, Y
Kondo, M
Fujiwara, C
Sekigawa, T
Kouchiyama, J
Miho, K
Citation: N. Sakakibara et al., Y2SiO5 high temperature oxidation resistant coating on C/C composites by plasma spraying, J JPN METAL, 63(1), 1999, pp. 118-125