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Results: 1-12 |
Results: 12
Study of MBE-grown GaN/AlGaN quantum well structures by two wavelength excited photoluminescence
Authors: Ocampo, JMZ Klausing, H Semchinova, O Stemmer, J Hirasawa, M Kamata, N Yamada, K
Citation: Jmz. Ocampo et al., Study of MBE-grown GaN/AlGaN quantum well structures by two wavelength excited photoluminescence, PHYS ST S-A, 183(1), 2001, pp. 189-195
InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
Authors: Aderhold, J Davydov, VY Fedler, F Klausing, H Mistele, D Rotter, T Semchinova, O Stemmer, J Graul, J
Citation: J. Aderhold et al., InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates, J CRYST GR, 222(4), 2001, pp. 701-705
Electron beam pumping in nitride vertical cavities with GaN/Al0.25Ga0.75N Bragg reflectors
Authors: Klausing, H Aderhold, J Fedler, F Mistele, D Stemmer, J Semchinova, O Graul, J Danhardt, J Panzer, S
Citation: H. Klausing et al., Electron beam pumping in nitride vertical cavities with GaN/Al0.25Ga0.75N Bragg reflectors, MRS I J N S, 5, 2000, pp. NIL_562-NIL_567
Point defects in gamma-irradiated n-GaN
Authors: Emtsev, VV Davydov, VY Kozlovskii, VV Lundin, VV Poloskin, DS Smirnov, AN Shmidt, NM Usikov, AS Aderhold, J Klausing, H Mistele, D Rotter, T Stemmer, J Semchinova, O Graul, J
Citation: Vv. Emtsev et al., Point defects in gamma-irradiated n-GaN, SEMIC SCI T, 15(1), 2000, pp. 73-78
Statistical Ga clusters and A(1)(TO) gap mode in AlxGa1-xN alloys
Authors: Klochikhin, AA Davydov, VY Goncharuk, IN Smirnov, AN Nikolaev, AE Baidakova, MV Aderhold, J Graul, J Stemmer, J Semchinova, O
Citation: Aa. Klochikhin et al., Statistical Ga clusters and A(1)(TO) gap mode in AlxGa1-xN alloys, PHYS REV B, 62(4), 2000, pp. 2522-2535
High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy
Authors: Stemmer, J Fedler, F Klausing, H Mistele, D Rotter, T Semchinova, O Aderhold, J Sanchez, AM Pacheco, FJ Molina, SI Fehrer, M Hommel, D Graul, J
Citation: J. Stemmer et al., High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy, J CRYST GR, 216(1-4), 2000, pp. 15-20
Synthesis and growth of ZnGeP2 crystals for nonlinear optical applications
Authors: Verozubova, GA Gribenyukov, AI Korotkova, VV Semchinova, O Uffmann, D
Citation: Ga. Verozubova et al., Synthesis and growth of ZnGeP2 crystals for nonlinear optical applications, J CRYST GR, 213(3-4), 2000, pp. 334-339
Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films
Authors: Emtsev, VV Davydov, VY Lundin, VV Poloskin, DS Aderhold, J Klausing, H Mistele, D Rotter, T Stemmer, J Fedler, F Semchinova, O Graul, J
Citation: Vv. Emtsev et al., Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films, J CRYST GR, 210(1-3), 2000, pp. 273-277
Raman spectroscopy of disorder effects in AlxGa1-xN solid solutions
Authors: Davydov, VY Goncharuk, IN Baidakova, MV Smirnov, AN Subashiev, AV Aderhold, J Stemmer, J Rotter, T Uffmann, D Semchinova, O
Citation: Vy. Davydov et al., Raman spectroscopy of disorder effects in AlxGa1-xN solid solutions, MAT SCI E B, 59(1-3), 1999, pp. 222-225
Smooth GaN surfaces by photoinduced electro-chemical etching
Authors: Rotter, T Aderhold, J Mistele, D Semchinova, O Stemmer, J Uffmann, D Graul, J
Citation: T. Rotter et al., Smooth GaN surfaces by photoinduced electro-chemical etching, MAT SCI E B, 59(1-3), 1999, pp. 350-354
Influence of pre-etching on specific contact parameters for metal-GaN contacts
Authors: Mistele, D Adertold, J Klausing, H Rotter, T Semchinova, O Stemmer, J Uffmann, D Graul, J Eberhard, F Mayer, M Schauler, M Kamp, M Ahrens, C
Citation: D. Mistele et al., Influence of pre-etching on specific contact parameters for metal-GaN contacts, SEMIC SCI T, 14(7), 1999, pp. 637-641
Phonon dispersion and Raman scattering in hexagonal GaN and AlN
Authors: Davydov, VY Kitaev, YE Goncharuk, IN Smirnov, AN Graul, J Semchinova, O Uffmann, D Smirnov, MB Mirgorodsky, AP Evarestov, RA
Citation: Vy. Davydov et al., Phonon dispersion and Raman scattering in hexagonal GaN and AlN, PHYS REV B, 58(19), 1998, pp. 12899-12907
Risultati: 1-12 |