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Results:
1-3
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Results: 3
Authors:
Semmler, U
Simon, M
Ebert, P
Urban, K
Citation: U. Semmler et al., Stoichiometry changes by selective vacancy formation on (110) surfaces of III-V semiconductors: Influence of electronic effects (vol 114, pg 445, 2001), J CHEM PHYS, 115(15), 2001, pp. 7330-7330
Authors:
Semmler, U
Simon, M
Ebert, P
Urban, K
Citation: U. Semmler et al., Stoichiometry changes by selective vacancy formation on (110) surfaces of III-V semiconductors: Influence of electronic effects, J CHEM PHYS, 114(1), 2001, pp. 445-451
Authors:
Semmler, U
Ebert, P
Urban, K
Citation: U. Semmler et al., Effect of charge carriers on the barrier height for vacancy formation on InP(110) surfaces, APPL PHYS L, 77(1), 2000, pp. 61-63
Risultati:
1-3
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