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Results: 1-7 |
Results: 7

Authors: Lampin, E Senez, V Claverie, A
Citation: E. Lampin et al., Modelisation of extended defects to simulate the transient enhanced diffusion of boron, MAT SCI E B, 71, 2000, pp. 155-159

Authors: Senez, V Herbaux, J Hoffmann, T Lampin, E
Citation: V. Senez et al., 3-dimensional process simulation of thermal annealing of low dose implanted dopants in silicon, IEICE TR EL, E83C(8), 2000, pp. 1267-1274

Authors: Senez, V Hoffmann, T Tixier, A
Citation: V. Senez et al., Calibration of a two-dimensional numerical model for the optimization of LOGOS-type isolations by response surface methodology, IEEE SEMIC, 13(4), 2000, pp. 416-426

Authors: Legrand, B Agache, V Nys, JP Senez, V Stievenard, D
Citation: B. Legrand et al., Formation of silicon islands on a silicon on insulator substrate upon thermal annealing, APPL PHYS L, 76(22), 2000, pp. 3271-3273

Authors: Hoffmann, T LeDuc, P Senez, V
Citation: T. Hoffmann et al., Finite-element calculations of mechanical stresses induced by water adsorption/desorption in silicate glasses, J VAC SCI B, 17(6), 1999, pp. 2603-2609

Authors: Lampin, E Senez, V
Citation: E. Lampin et V. Senez, Modeling of the kinetics of dislocation loops, NUCL INST B, 147(1-4), 1999, pp. 13-17

Authors: Lampin, E Senez, V Claverie, A
Citation: E. Lampin et al., Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon, J APPL PHYS, 85(12), 1999, pp. 8137-8144
Risultati: 1-7 |