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Ho, YW
Ng, V
Choi, WK
Ng, SP
Osipowicz, T
Seng, HL
Tjui, WW
Li, K
Citation: Yw. Ho et al., Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using Raman spectroscopy, RBS and TEM, SCR MATER, 44(8-9), 2001, pp. 1291-1295
Authors:
Latt, KM
Lee, YK
Li, S
Osipowicz, T
Seng, HL
Citation: Km. Latt et al., The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structure, MAT SCI E B, 84(3), 2001, pp. 217-223
Authors:
Natarajan, A
Bera, LK
Choi, WK
Osipowicz, T
Seng, HL
Citation: A. Natarajan et al., Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin films, SOL ST ELEC, 45(11), 2001, pp. 1957-1961
Citation: Km. Latt et al., Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide, J MATER SCI, 36(24), 2001, pp. 5845-5851
Authors:
Chong, YF
Pey, KL
Lu, YF
Wee, ATS
Osipowicz, T
Seng, HL
See, A
Dai, JY
Citation: Yf. Chong et al., Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p(+)/n junctions, APPL PHYS L, 77(19), 2000, pp. 2994-2996