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Results: 5
Vibrational properties of AlN grown on (111)-oriented silicon - art. no. 125313
Authors:
Prokofyeva, T Seon, M Vanbuskirk, J Holtz, M Nikishin, SA Faleev, NN Temkin, H Zollner, S
Citation:
T. Prokofyeva et al., Vibrational properties of AlN grown on (111)-oriented silicon - art. no. 125313, PHYS REV B, 6312(12), 2001, pp. 5313
Composition dependence of the optical phonon energies in hexagonal AlxGa1-xN
Authors:
Holtz, M Prokofyeva, T Seon, M Copeland, K Vanbuskirk, J Williams, S Nikishin, SA Tretyakov, V Temkin, H
Citation:
M. Holtz et al., Composition dependence of the optical phonon energies in hexagonal AlxGa1-xN, J APPL PHYS, 89(12), 2001, pp. 7977-7982
Selective growth of high quality GaN on Si(111) substrates
Authors:
Seon, M Prokofyeva, T Holtz, M Nikishin, SA Faleev, NN Temkin, H
Citation:
M. Seon et al., Selective growth of high quality GaN on Si(111) substrates, APPL PHYS L, 76(14), 2000, pp. 1842-1844
Raman studies of heavily carbon doped GaAs
Authors:
Seon, M Holtz, M Duncan, WM Kim, TS
Citation:
M. Seon et al., Raman studies of heavily carbon doped GaAs, J APPL PHYS, 85(10), 1999, pp. 7224-7230
Micro-Raman imaging of GaN hexagonal island structures
Authors:
Holtz, M Seon, M Prokofyeva, T Temkin, H Singh, R Dabkowski, FP Moustakas, TD
Citation:
M. Holtz et al., Micro-Raman imaging of GaN hexagonal island structures, APPL PHYS L, 75(12), 1999, pp. 1757-1759
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