Authors:
Nikishin, SA
Faleev, NN
Antipov, VG
Francoeur, S
de Peralta, LG
Seryogin, GA
Holtz, M
Prokofyeva, TI
Chu, SNG
Zubrilov, AS
Elyukhin, VA
Nikitina, IP
Nikolaev, A
Melnik, Y
Dmitriev, V
Temkin, H
Citation: Sa. Nikishin et al., High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia, MRS I J N S, 5, 2000, pp. NIL_401-NIL_406
Authors:
Francoeur, S
Seryogin, GA
Nikishin, SA
Temkin, H
Citation: S. Francoeur et al., Quantitative determination of the order parameter in epitaxial layers of ZnSnP2, APPL PHYS L, 76(15), 2000, pp. 2017-2019
Authors:
Nikishin, SA
Antipov, VG
Francoeur, S
Faleev, NN
Seryogin, GA
Elyukhin, VA
Temkin, H
Prokofyeva, TI
Holtz, M
Konkar, A
Zollner, S
Citation: Sa. Nikishin et al., High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia, APPL PHYS L, 75(4), 1999, pp. 484-486
Authors:
Nikishin, SA
Faleev, NN
Antipov, VG
Francoeur, S
Grave de Peralta, L
Seryogin, GA
Temkin, H
Prokofyeva, TI
Holtz, M
Chu, SNG
Citation: Sa. Nikishin et al., High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia, APPL PHYS L, 75(14), 1999, pp. 2073-2075
Authors:
Francoeur, S
Seryogin, GA
Nikishin, SA
Temkin, H
Citation: S. Francoeur et al., X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grownon GaAs, APPL PHYS L, 74(24), 1999, pp. 3678-3680