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Setsuhara, Y
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Citation: M. Matsuoka et al., Influence of ion energy and arrival rate on x-ray crystallographic properties of thin ZrOx films prepared on Si(111) substrate by ion-beam assisted deposition, J APPL PHYS, 88(6), 2000, pp. 3773-3775
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Setsuhara, Y
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Citation: Y. Setsuhara et al., Production of inductively-coupled large-diameter plasmas with internal antenna, JPN J A P 1, 38(7B), 1999, pp. 4263-4267
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Setsuhara, Y
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Musil, J
Citation: M. Yamashita et al., Studies on magnetron sputtering assisted by inductively coupled RF plasma for enhanced metal ionization, JPN J A P 1, 38(7B), 1999, pp. 4291-4295
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Setsuhara, Y
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Kumagai, M
Sakawa, Y
Shoji, T
Citation: S. Miyake et al., Formation of carbon nitride films by reactive high-density plasma sputtering with excitation of m=0 mode helicon wave, SURF COAT, 119, 1999, pp. 11-17
Authors:
Setsuhara, Y
Kumagai, M
Suzuki, M
Suzuki, T
Miyake, S
Citation: Y. Setsuhara et al., Properties of cubic boron nitride films with buffer layer control for stress relaxation using ion-beam-assisted deposition, SURF COAT, 119, 1999, pp. 100-107