Authors: Schunemann, PG Setzler, SD Pollak, TM Ptak, AJ Myers, TH

Citation: Pg. Schunemann et al., Defect segregation in CdGeAs2, J CRYST GR, 225(2-4), 2001, pp. 440-444

Authors: Schunemann, PG Setzler, SD Pollak, TM Ohmer, MC Goldstein, JT Zelmon, DE

Citation: Pg. Schunemann et al., Crystal growth and properties of AgGaTe2, J CRYST GR, 211(1-4), 2000, pp. 242-246

Authors: Schunemann, PG Setzler, SD Pollak, TM

Citation: Pg. Schunemann et al., Phase-matched crystal growth of AgGaSe2 and AgGa1-xInxSe2, J CRYST GR, 211(1-4), 2000, pp. 257-264

Authors: Setzler, SD Schunemann, PG Pollak, TM Ohmer, MC Goldstein, JT Hopkins, FK Stevens, KT Halliburton, LE Giles, NC

Citation: Sd. Setzler et al., Characterization of defect-related optical absorption in ZnGeP2, J APPL PHYS, 86(12), 1999, pp. 6677-6681

Authors: Stevens, KT Setzler, SD Halliburton, LE Scripsick, MP Rottenberg, J

Citation: Kt. Stevens et al., Role of silicon impurities in the trapping of holes in KTiOPO4 crystals, J APPL PHYS, 85(2), 1999, pp. 1063-1068

Authors: Setzler, SD Giles, NC Halliburton, LE Schunemann, PG Pollak, TM

Citation: Sd. Setzler et al., Electron paramagnetic resonance of a cation antisite defect in ZnGeP2, APPL PHYS L, 74(9), 1999, pp. 1218-1220