Authors: Liu, WC Chang, WL Lour, WS Cheng, SY Shie, YH Chen, JY Wang, WC Pan, SJ

Citation: Wc. Liu et al., Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49/In0.15Ga0.85As pseudomorphic HEMT, IEEE ELEC D, 20(6), 1999, pp. 274-276

Authors: Chang, WL Cheng, SY Shie, YH Pan, HJ Lour, WS Liu, WC

Citation: Wl. Chang et al., On the n(+)-GaAs/delta(p(+))-GaInP/n-GaAs high breakdown voltage field-effect transistor, SEMIC SCI T, 14(4), 1999, pp. 307-311

Authors: Shie, YH Chang, WL Pan, HJ Chen, SY Lour, WS Liu, WC

Citation: Yh. Shie et al., On the low-medium-high step-modulation-doped-channel (LMH-SMDC) heterostructure field-effect transistor, MATER CH PH, 57(3), 1999, pp. 268-272

Authors: Cheng, SY Tsai, JH Chang, WL Pan, WJ Shie, YH Liu, WC

Citation: Sy. Cheng et al., Investigation of an InGaP GaAs resonant-tunneling transistor (RTT), SOL ST ELEC, 43(4), 1999, pp. 755-760

Authors: Cheng, SY Chang, WL Pan, HJ Shie, YH Liu, WC

Citation: Sy. Cheng et al., Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistors, SOL ST ELEC, 43(2), 1999, pp. 297-304

Authors: Lour, WS Chang, WL Liu, WC Shie, YH Pan, HJ Chen, JY Wang, WC

Citation: Ws. Lour et al., Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85 As pseudomorphic transistors, APPL PHYS L, 74(15), 1999, pp. 2155-2157