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Results: 6
Free-carrier effects in gallium nitride epilayers: Valence-band dispersion- art. no. 081203
Authors:
Shields, PA Nicholas, RJ Peeters, FM Beaumont, B Gibart, P
Citation:
Pa. Shields et al., Free-carrier effects in gallium nitride epilayers: Valence-band dispersion- art. no. 081203, PHYS REV B, 6408(8), 2001, pp. 1203
Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies - art. no. 245319
Authors:
Shields, PA Nicholas, RJ Grandjean, N Massies, J
Citation:
Pa. Shields et al., Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies - art. no. 245319, PHYS REV B, 6324(24), 2001, pp. 5319
InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
Authors:
Tyan, SL Lin, YG Tsai, FY Lee, CP Shields, PA Nicholas, RJ
Citation:
Sl. Tyan et al., InGaAs/GaAs quantum wells and quantum dots on (111)B orientation, SOL ST COMM, 117(11), 2001, pp. 649-654
Magneto-photoluminescence of AlGaN/GaN quantum wells
Authors:
Shields, PA Nicholas, RJ Grandjean, N Massies, J
Citation:
Pa. Shields et al., Magneto-photoluminescence of AlGaN/GaN quantum wells, J CRYST GR, 230(3-4), 2001, pp. 487-491
Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate
Authors:
Tyan, SL Shields, PA Nicholas, RJ Tsai, FY Lee, CP
Citation:
Sl. Tyan et al., Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate, JPN J A P 1, 39(6A), 2000, pp. 3286-3289
Magneto-reflectivity of gallium nitride epilayers
Authors:
Shields, PA Nicholas, RJ Beaumont, B Gibart, P
Citation:
Pa. Shields et al., Magneto-reflectivity of gallium nitride epilayers, PHYS ST S-B, 216(1), 1999, pp. 17-20
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