Citation: Wc. Shin et al., Characteristics of Pt/YMnO3/Y2O3/Si structure using a Y2O3 buffer layer grown by pulsed laser deposition, J VAC SCI B, 19(1), 2001, pp. 239-243
Authors:
Shin, EC
Shin, WC
Choi, Y
Kim, H
Park, JH
Kim, SJ
Citation: Ec. Shin et al., Effect of interferon-gamma on the susceptibility to Fas (CD95/APO-1)-mediated cell death in human hepatoma cells, CANCER IMMU, 50(1), 2001, pp. 23-30
Authors:
Shin, WC
Hong, SB
Tae, WS
Seo, DW
Kim, SE
Citation: Wc. Shin et al., Ictal hyperperfusion of cerebellum and basal ganglia in temporal lobe epilepsy: SPECT subtraction with MRI coregistration, J NUCL MED, 42(6), 2001, pp. 853-858
Citation: Kj. Choi et al., Ferroelectric YMnO3 thin films grown by metal-organic chemical vapor deposition for metal/ferroelectric/semiconductor field-effect transistors, THIN SOL FI, 384(1), 2001, pp. 146-150
Citation: Em. Lee et al., Diffusion barrier characteristics of TaSiN for Pt/TaSiN/Poly-Si electrode structure of semiconductor memory device, J ELCHEM SO, 148(11), 2001, pp. G611-G615
Citation: Wc. Shin et Sg. Yoon, Compositional control of ferroelectric SrBi2Ta2O9 thin films by liquid delivery MOCVD using a single cocktail of Sr[Ta(OEt)(5)(dmae)](2) and Bi(C6H5)(3), J ELCHEM SO, 148(11), 2001, pp. C762-C766
Citation: Wc. Shin et Sg. Yoon, Improvement in ferroelectric properties of SrBi2Ta2O9 thin films with Bi2O3 buffer layers by liquid-delivery metalorganic chemical-vapor deposition, APPL PHYS L, 79(10), 2001, pp. 1519-1521
Authors:
Choi, ES
Shin, WC
Suh, TS
Park, SS
Yoon, SG
Citation: Es. Choi et al., Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor, INTEGR FERR, 31(1-4), 2000, pp. 297-304
Authors:
Shin, WC
Choi, KJ
Choi, ES
Park, CM
Yoon, SG
Citation: Wc. Shin et al., Ferroelectric SrBi2Ta2O9 thin films deposited by liquid injection MOCVD using novel bimetallic alkoxide precursor, INTEGR FERR, 30(1-4), 2000, pp. 27-36
Citation: Wc. Shin et Sg. Yoon, Effect of RF power on the growth and electrical properties of SrBi2Ta2O9 thin films by plasma-enhanced metalorganic chemical vapor deposition, INTEGR FERR, 26(1-4), 1999, pp. 855-863
Citation: Wc. Shin et al., Ferroelectric SrBi2Ta2O9 thin films deposited by plasma-enhanced MOCVD fornonvolatile memory device applications, J KOR PHYS, 35, 1999, pp. S115-S118
Citation: Kj. Choi et al., Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer, APPL PHYS L, 75(5), 1999, pp. 722-724