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Results: 1-9 |
Results: 9
MBE growth of cubic AlyGa1-yN/GaN heterostructures structural, vibrationaland optical properties
Authors: As, DJ Frey, T Bartels, M Lischka, K Goldhahn, R Shokhovets, S Tabata, A Fernandez, JRL Leite, JR
Citation: Dj. As et al., MBE growth of cubic AlyGa1-yN/GaN heterostructures structural, vibrationaland optical properties, J CRYST GR, 230(3-4), 2001, pp. 421-425
Determination of group III nitride film properties by reflectance and spectroscopic ellipsometry studies
Authors: Goldhahn, R Shokhovets, S Scheiner, J Gobsch, G Cheng, TS Foxon, CT Kaiser, U Kipshidze, GD Richter, W
Citation: R. Goldhahn et al., Determination of group III nitride film properties by reflectance and spectroscopic ellipsometry studies, PHYS ST S-A, 177(1), 2000, pp. 107-115
Refractive index and gap energy of cubic InxGa1-xN
Authors: Goldhahn, R Scheiner, J Shokhovets, S Frey, T Kohler, U As, DJ Lischka, K
Citation: R. Goldhahn et al., Refractive index and gap energy of cubic InxGa1-xN, APPL PHYS L, 76(3), 2000, pp. 291-293
Optical characterisation of interface properties for hexagonal GaN grown by MBE on GaAs
Authors: Shokhovets, S Goldhahn, R Gobsch, G Cheng, TS Foxon, CT
Citation: S. Shokhovets et al., Optical characterisation of interface properties for hexagonal GaN grown by MBE on GaAs, MAT SCI E B, 59(1-3), 1999, pp. 69-72
Determination of optical constants for cubic InxGa1-xN layers
Authors: Goldhahn, R Scheiner, J Shokhovets, S Frey, T Kohler, U As, DJ Lischka, K
Citation: R. Goldhahn et al., Determination of optical constants for cubic InxGa1-xN layers, PHYS ST S-B, 216(1), 1999, pp. 265-268
Optical study of the alpha-GaN/GaAs interface properties as a function of MBE growth conditions
Authors: Shokhovets, S Goldhahn, R Cheng, TS Foxon, CT
Citation: S. Shokhovets et al., Optical study of the alpha-GaN/GaAs interface properties as a function of MBE growth conditions, SEMIC SCI T, 14(2), 1999, pp. 181-186
Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxy
Authors: Schenk, HPD Kipshidze, GD Lebedev, VB Shokhovets, S Goldhahn, R Krausslich, J Fissel, A Richter, W
Citation: Hpd. Schenk et al., Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 359-364
Reflectivity investigations as a method for characterizing group III nitride films
Authors: Shokhovets, S Goldhahn, R Gobsch, G Cheng, TS Foxon, CT Kipshidze, GD Richter, W
Citation: S. Shokhovets et al., Reflectivity investigations as a method for characterizing group III nitride films, J APPL PHYS, 86(5), 1999, pp. 2602-2610
Optical constants of cubic GaN in the energy range of 1.5-3.7 eV
Authors: Kohler, U As, DJ Schottker, B Frey, T Lischka, K Scheiner, J Shokhovets, S Goldhahn, R
Citation: U. Kohler et al., Optical constants of cubic GaN in the energy range of 1.5-3.7 eV, J APPL PHYS, 85(1), 1999, pp. 404-407
Risultati: 1-9 |