Authors:
Pic, N
Glachant, A
Nitsche, S
Hoarau, JY
Goguenheim, D
Vuillaume, D
Sibai, A
Chaneliere, C
Citation: N. Pic et al., Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx, SOL ST ELEC, 45(8), 2001, pp. 1265-1270
Authors:
Pic, N
Glachant, A
Nitsche, S
Hoarau, JY
Goguenheim, D
Vuillaume, D
Sibai, A
Autran, JL
Citation: N. Pic et al., Determination of the electrical properties of 2.5 nm thick silicon-based dielectric films: thermally grown SiOx, J NON-CRYST, 280(1-3), 2001, pp. 69-77
Authors:
Pic, N
Glachant, A
Nitsche, S
Hoarau, JY
Goguenheim, D
Vuillaume, D
Sibai, A
Chaneliere, C
Citation: N. Pic et al., Determination of the electrical properties of thermally grown ultrathin nitride films, MICROEL REL, 40(4-5), 2000, pp. 589-592
Authors:
Lapeyrade, M
Besland, MP
Meva'a, C
Sibai, A
Hollinger, G
Citation: M. Lapeyrade et al., Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition, J VAC SCI A, 17(2), 1999, pp. 433-444