Authors:
Kaplar, RJ
Kwon, D
Ringel, SA
Allerman, AA
Kurtz, SR
Jones, ED
Sieg, RM
Citation: Rj. Kaplar et al., Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III-V solar cells, SOL EN MAT, 69(1), 2001, pp. 85-91
Authors:
Xu, Q
Hsu, JWP
Carlin, JA
Sieg, RM
Boeckl, JJ
Ringel, SA
Citation: Q. Xu et al., Topographic and electronic studies of wedge-shape surface defects on AlGaAs/GaAs films grown on Ge substrates, APPL PHYS L, 75(14), 1999, pp. 2111-2113