AAAAAA

   
Results: 1-10 |
Results: 10
Valence band intersubband electro luminescence from Si/SiGe quantum cascade structures
Authors: Sigg, H Dehlinger, G Diehl, L Gennser, U Stutz, S Faist, J Grutzmacher, D Ensslin, K Muller, E
Citation: H. Sigg et al., Valence band intersubband electro luminescence from Si/SiGe quantum cascade structures, PHYSICA E, 11(2-3), 2001, pp. 240-244
Photon drag investigations of current relaxation processes in a two-dimensional electron gas
Authors: Graf, S Sigg, H Kohler, K Bachtold, W
Citation: S. Graf et al., Photon drag investigations of current relaxation processes in a two-dimensional electron gas, PHYS REV B, 62(15), 2000, pp. 10301-10309
Photoluminescence of carbon-induced Ge islands in silicon
Authors: Beyer, A Leifeld, O Muller, E Stutz, S Sigg, H Grutzmacher, D
Citation: A. Beyer et al., Photoluminescence of carbon-induced Ge islands in silicon, THIN SOL FI, 380(1-2), 2000, pp. 246-248
Intersubband electroluminescence from silicon-based quantum cascade structures
Authors: Dehlinger, G Diehl, L Gennser, U Sigg, H Faist, J Ensslin, K Grutzmacher, D Muller, E
Citation: G. Dehlinger et al., Intersubband electroluminescence from silicon-based quantum cascade structures, SCIENCE, 290(5500), 2000, pp. 2277
Direct observation of depolarization shift of the intersubband resonance
Authors: Graf, S Sigg, H Kohler, K Bachtold, W
Citation: S. Graf et al., Direct observation of depolarization shift of the intersubband resonance, PHYS REV L, 84(12), 2000, pp. 2686-2689
The refractive index of AlxGa1-xAs below the band gap: Accurate determination and empirical modeling
Authors: Gehrsitz, S Reinhart, FK Gourgon, C Herres, N Vonlanthen, A Sigg, H
Citation: S. Gehrsitz et al., The refractive index of AlxGa1-xAs below the band gap: Accurate determination and empirical modeling, J APPL PHYS, 87(11), 2000, pp. 7825-7837
Size control of carbon-induced Ge quantum dots
Authors: Beyer, A Muller, E Sigg, H Stutz, S Grutzmacher, D Leifeld, O Ensslin, K
Citation: A. Beyer et al., Size control of carbon-induced Ge quantum dots, APPL PHYS L, 77(20), 2000, pp. 3218-3220
High-frequency electrical pulse generation using optical rectification in bulk GaAs
Authors: Graf, S Sigg, H Bachtold, W
Citation: S. Graf et al., High-frequency electrical pulse generation using optical rectification in bulk GaAs, APPL PHYS L, 76(19), 2000, pp. 2647-2649
Compositional dependence of the elastic constants and the lattice parameter of AlxGa1-xAs
Authors: Gehrsitz, S Sigg, H Herres, N Bachem, K Kohler, K Reinhart, FK
Citation: S. Gehrsitz et al., Compositional dependence of the elastic constants and the lattice parameter of AlxGa1-xAs, PHYS REV B, 60(16), 1999, pp. 11601-11610
Band gap and band alignment of strain reduced Si/Si1-x-yGexCy multiple quantum well structures obtained by photoluminescence measurements
Authors: Hartmann, R Gennser, U Sigg, H Grutzmacher, D Ensslin, K
Citation: R. Hartmann et al., Band gap and band alignment of strain reduced Si/Si1-x-yGexCy multiple quantum well structures obtained by photoluminescence measurements, APPL PHYS L, 73(9), 1998, pp. 1257-1259
Risultati: 1-10 |