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Results:
1-7
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Results: 7
Authors:
Gibbons, MR
Sin, K
Funada, S
Mao, M
Rao, D
Chien, C
Tong, HC
Citation: Mr. Gibbons et al., Micromagnetic simulation of tunneling magnetoresistance junctions with parallel hard bias, J APPL PHYS, 89(11), 2001, pp. 7003-7005
Authors:
Sin, K
Gibbons, MR
Funada, S
Mao, M
Rao, D
Chien, C
Tong, HC
Citation: K. Sin et al., Spin-dependent tunneling junctions with parallel hard bias for read heads, J APPL PHYS, 89(11), 2001, pp. 7359-7361
Authors:
Rao, D
Sin, K
Gibbons, M
Funada, S
Mao, M
Chien, C
Tong, HC
Citation: D. Rao et al., Voltage-induced barrier-layer damage in spin-dependent tunneling junctions, J APPL PHYS, 89(11), 2001, pp. 7362-7364
Authors:
Sin, K
Mao, M
Chien, C
Funada, S
Miloslavsky, L
Tong, HC
Gupta, S
Citation: K. Sin et al., Low resistance spin-dependent tunneling junctions with naturally oxidized tunneling barrier, IEEE MAGNET, 36(5), 2000, pp. 2818-2820
Authors:
Wang, SX
Sin, K
Hong, J
Nguyentran, L
Citation: Sx. Wang et al., Magnetic properties, microstructures, and corrosion resistance of high-saturation FeMoN and FeRhN films for recording heads, IEEE MAGNET, 36(2), 2000, pp. 513-520
Authors:
Wee, ATA
Wang, SX
Sin, K
Citation: Ata. Wee et al., In-situ characterization of oxide growth for fabricating spin-dependent tunnel junctions, IEEE MAGNET, 35(5), 1999, pp. 2949-2951
Authors:
Bobo, JF
Mancoff, FB
Bessho, K
Sharma, M
Sin, K
Guarisco, D
Wang, SX
Clemens, BM
Citation: Jf. Bobo et al., Spin-dependent tunneling junctions with hard magnetic layer pinning, J APPL PHYS, 83(11), 1998, pp. 6685-6687
Risultati:
1-7
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