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Results: 1-11 |
Results: 11
Pressure studies of band structure, defects and impurities in group III nitrides
Authors: Perlin, P Suski, T Skierbiszewski, C Wisniewski, P
Citation: P. Perlin et al., Pressure studies of band structure, defects and impurities in group III nitrides, HIGH PR RES, 18(1-6), 2000, pp. 21-28
High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates
Authors: Frayssinet, E Knap, W Lorenzini, P Grandjean, N Massies, J Skierbiszewski, C Suski, T Grzegory, I Porowski, S Simin, G Hu, X Khan, MA Shur, MS Gaska, R Maude, D
Citation: E. Frayssinet et al., High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates, APPL PHYS L, 77(16), 2000, pp. 2551-2553
Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x
Authors: Skierbiszewski, C Perlin, P Wisniewski, P Knap, W Suski, T Walukiewicz, W Shan, W Yu, KM Ager, JW Haller, EE Geisz, JF Olson, JM
Citation: C. Skierbiszewski et al., Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x, APPL PHYS L, 76(17), 2000, pp. 2409-2411
Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01
Authors: Perlin, P Wisniewski, P Skierbiszewski, C Suski, T Kaminska, E Subramanya, SG Weber, ER Mars, DE Walukiewicz, W
Citation: P. Perlin et al., Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01, APPL PHYS L, 76(10), 2000, pp. 1279-1281
Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys
Authors: Skierbiszewski, C Perlin, P Wisniewski, P Suski, T Walukiewicz, W Shan, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: C. Skierbiszewski et al., Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys, PHYS ST S-B, 216(1), 1999, pp. 135-139
Pressure studies of defects and impurities in nitrides
Authors: Suski, T Perlin, P Skierbiszewski, C Wisniewski, P Dmowski, L Leszczynski, M Walukiewicz, W
Citation: T. Suski et al., Pressure studies of defects and impurities in nitrides, PHYS ST S-B, 216(1), 1999, pp. 521-528
Conduction band energy spectrum of two-dimensional electrons in GaN/AlGaN heterojunctions
Authors: Knap, W Frayssinet, E Skierbiszewski, C Chaubet, C Sadowski, ML Maude, D Khan, MA Shur, MS
Citation: W. Knap et al., Conduction band energy spectrum of two-dimensional electrons in GaN/AlGaN heterojunctions, PHYS ST S-B, 216(1), 1999, pp. 719-725
Effective g() factor of two-dimensional electrons in GaN/AlGaN heterojunctions
Authors: Knap, W Frayssinet, E Sadowski, ML Skierbiszewski, C Maude, D Falko, V Khan, MA Shur, MS
Citation: W. Knap et al., Effective g() factor of two-dimensional electrons in GaN/AlGaN heterojunctions, APPL PHYS L, 75(20), 1999, pp. 3156-3158
Evidence for localized Si-donor state and its DX-like properties in AlGaN (vol 74, pg 3833, 1999)
Authors: Skierbiszewski, C Suski, T Leszczynski, M Shin, M Skowronski, M Bremser, MD Davis, RF
Citation: C. Skierbiszewski et al., Evidence for localized Si-donor state and its DX-like properties in AlGaN (vol 74, pg 3833, 1999), APPL PHYS L, 75(20), 1999, pp. 3225A-3225A
Evidence for localized Si-donor state and its metastable properties in AlGaN
Authors: Skierbiszewski, C Suski, T Leszczynski, M Shin, M Skowronski, M Bremser, MD Davis, RF
Citation: C. Skierbiszewski et al., Evidence for localized Si-donor state and its metastable properties in AlGaN, APPL PHYS L, 74(25), 1999, pp. 3833-3835
The universal behaviour of shallow-deep level instabilities in semiconductors
Authors: Skierbiszewski, C Wilamowski, Z Jantsch, W
Citation: C. Skierbiszewski et al., The universal behaviour of shallow-deep level instabilities in semiconductors, PHYS ST S-B, 210(2), 1998, pp. 765-769
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