Authors: Zegrya, GG Pikhtin, NA Skrynnikov, GV Slipchenko, SO Tarasov, IS

Citation: Gg. Zegrya et al., Threshold characteristics of lambda=1.55 mu m InGaAsP/InP heterolasers, SEMICONDUCT, 35(8), 2001, pp. 962-969

Authors: Vavilova, LS Kapitonov, VA Livshits, DA Lyutetskii, AV Murashova, AV Pikhtin, NA Skrynnikov, GV Tarasov, IS

Citation: Ls. Vavilova et al., Photoluminescent and electroluminescent properties of spontaneously forming periodic InGaAsP structures, SEMICONDUCT, 34(3), 2000, pp. 319-322

Authors: Leshko, AY Lyutetskii, AV Pikhtin, NA Skrynnikov, GV Sokolova, ZN Tarasov, IS Fetisova, NV

Citation: Ay. Leshko et al., On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers, SEMICONDUCT, 34(12), 2000, pp. 1397-1401