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Results: 1-13 |
Results: 13
Substrate influence on the ordering of organic submonolayers: a comparative study of PTCDA on Ag(110) and Ag(111) using HREELS
Authors: Tautz, FS Sloboshanin, S Shklover, V Scholz, R Sokolowski, M Schaefer, JA Umbach, E
Citation: Fs. Tautz et al., Substrate influence on the ordering of organic submonolayers: a comparative study of PTCDA on Ag(110) and Ag(111) using HREELS, APPL SURF S, 166(1-4), 2000, pp. 363-369
Vibrational properties of ultrathin PTCDA films on Ag(110)
Authors: Tautz, FS Sloboshanin, S Schaefer, JA Scholz, R Shklover, V Sokolowski, M Umbach, E
Citation: Fs. Tautz et al., Vibrational properties of ultrathin PTCDA films on Ag(110), PHYS REV B, 61(24), 2000, pp. 16933-16947
Reassessment of core-level photoemission spectra of reconstructed SiC(0001) surfaces
Authors: Tautz, FS Sloboshanin, S Starke, U Schaefer, JA
Citation: Fs. Tautz et al., Reassessment of core-level photoemission spectra of reconstructed SiC(0001) surfaces, SURF SCI, 470(1-2), 2000, pp. L25-L31
Differences in vibronic and electronic excitations of PTCDA on Ag(111) andAg(110)
Authors: Shklover, V Tautz, FS Scholz, R Sloboshanin, S Sokolowski, M Schaefer, JA Umbach, E
Citation: V. Shklover et al., Differences in vibronic and electronic excitations of PTCDA on Ag(111) andAg(110), SURF SCI, 454, 2000, pp. 60-66
Polarity, morphology and reactivity of epitaxial GaN films on Al2O3(0001)
Authors: Starke, U Sloboshanin, S Tautz, FS Seubert, A Schaefer, JA
Citation: U. Starke et al., Polarity, morphology and reactivity of epitaxial GaN films on Al2O3(0001), PHYS ST S-A, 177(1), 2000, pp. 5-14
Reactivity and morphology of (10(12)over-bar)-faceted and (3x3)-reconstructed GaN(000(1)over-bar) epilayers grown on sapphire(0001)
Authors: Tautz, FS Sloboshanin, S Starke, U Schaefer, JA
Citation: Fs. Tautz et al., Reactivity and morphology of (10(12)over-bar)-faceted and (3x3)-reconstructed GaN(000(1)over-bar) epilayers grown on sapphire(0001), J PHYS-COND, 11(41), 1999, pp. 8035-8048
Interface formation of Ag and Au with InP(001)2x4: a photoemission study
Authors: Sloboshanin, S Engelhard, H Goldmann, A Schaefer, JA
Citation: S. Sloboshanin et al., Interface formation of Ag and Au with InP(001)2x4: a photoemission study, APPL SURF S, 143(1-4), 1999, pp. 104-114
Arsenic interlayers at the Sn/InP(001) interface
Authors: Gebhardt, RK Sloboshanin, S Schaefer, JA Chasse, T
Citation: Rk. Gebhardt et al., Arsenic interlayers at the Sn/InP(001) interface, APPL SURF S, 142(1-4), 1999, pp. 94-98
Photoemission study of the interface reaction between Ag and H2S treated InP(001)
Authors: Sloboshanin, S Gebhardt, RK Schaefer, JA Chasse, T
Citation: S. Sloboshanin et al., Photoemission study of the interface reaction between Ag and H2S treated InP(001), SURF SCI, 431(1-3), 1999, pp. 252-259
Structural, vibrational and electronic properties of faceted GaN (000(1)over-bar) surfaces
Authors: Sloboshanin, S Tautz, FS Polyakov, VM Starke, U Usikov, AS Ber, BJ Schaefer, JA
Citation: S. Sloboshanin et al., Structural, vibrational and electronic properties of faceted GaN (000(1)over-bar) surfaces, SURF SCI, 428, 1999, pp. 250-256
Surface state-derived electronic transitions of SiC(001)
Authors: Polyakov, VM Balster, T Sloboshanin, S Tautz, FS Ibach, H Schaefer, JA
Citation: Vm. Polyakov et al., Surface state-derived electronic transitions of SiC(001), SURF SCI, 420(1), 1999, pp. 87-94
Surface plasmons at MOCVD-grown GaN(000(1)over-bar)
Authors: Polyakov, VM Tautz, FS Sloboshanin, S Schaefer, JA Usikov, AS Ber, BJ
Citation: Vm. Polyakov et al., Surface plasmons at MOCVD-grown GaN(000(1)over-bar), SEMIC SCI T, 13(12), 1998, pp. 1396-1400
Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy
Authors: Cimalla, V Stauden, T Ecke, G Scharmann, F Eichhorn, G Pezoldt, J Sloboshanin, S Schaefer, JA
Citation: V. Cimalla et al., Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy, APPL PHYS L, 73(24), 1998, pp. 3542-3544
Risultati: 1-13 |