Authors: Kessels, WMM Smets, AHM Marra, DC Aydil, ES Schram, DC van de Sanden, MCM

Citation: Wmm. Kessels et al., On the growth mechanism of a-Si : H, THIN SOL FI, 383(1-2), 2001, pp. 154-160

Authors: Kessels, WMM Severens, RJ Smets, AHM Korevaar, BA Adriaenssens, GJ Schram, DC van de Sanden, MCM

Citation: Wmm. Kessels et al., Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H-2-SiH4 plasma, J APPL PHYS, 89(4), 2001, pp. 2404-2413

Authors: Korevaar, BA Adriaenssens, GJ Smets, AHM Kessels, WMM Song, HZ van de Sanden, MCM Schram, DC

Citation: Ba. Korevaar et al., High hole drift mobility in a-Si : H deposited at high growth rates for solar cell application, J NON-CRYST, 266, 2000, pp. 380-384

Authors: Smets, AHM Schram, DC van de Sanden, MCM

Citation: Ahm. Smets et al., In situ single wavelength ellipsometry studies of high rate hydrogenated amorphous silicon growth using a remote expanding thermal plasma, J APPL PHYS, 88(11), 2000, pp. 6388-6394

Authors: van de Sanden, MCM van Hest, MFAM de Graaf, A Smets, AHM Letourneur, KGY Boogaarts, MGH Schram, DC

Citation: Mcm. Van De Sanden et al., Plasma chemistry of an expanding Ar/C2H2 plasma used for fast deposition of a-C : H, DIAM RELAT, 8(2-5), 1999, pp. 677-681

Authors: Smets, AHM de Sanden, MCM Schram, DC

Citation: Ahm. Smets et al., In situ ellipsometric studies of the a-Si : H growth using an expanding thermal plasma, THIN SOL FI, 344, 1999, pp. 281-284