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Results: 1-25 | 26-29
Results: 1-25/29
Electroconductivity of solid solutions Rb3-xP1-xExO4 (E = S, Cr, Mo, W)
Authors: Smirnov, NB Shekhtman, GS Burmakin, EI Antonov, BD
Citation: Nb. Smirnov et al., Electroconductivity of solid solutions Rb3-xP1-xExO4 (E = S, Cr, Mo, W), RUSS J ELEC, 37(9), 2001, pp. 979-981
Co-cation conduction in solid solutions (K1-xRbx)(4)P2O7 (M = Ca, Sr, Cd, Ba): Dependence on the nature and concentration of cations M2+
Authors: Smirnov, NB Burmakin, EI Antonov, BD Shekhtman, GS
Citation: Nb. Smirnov et al., Co-cation conduction in solid solutions (K1-xRbx)(4)P2O7 (M = Ca, Sr, Cd, Ba): Dependence on the nature and concentration of cations M2+, RUSS J ELEC, 37(3), 2001, pp. 322-325
Co-cation conduction in solid solutions (K1-xRbx)(4)P2O7-M2P2O7 (M = Ca, Sr, Cd, Ba): Transport numbers and partial ionic conductivities
Authors: Smirnov, NB Burmakin, EI Shekhtman, GS
Citation: Nb. Smirnov et al., Co-cation conduction in solid solutions (K1-xRbx)(4)P2O7-M2P2O7 (M = Ca, Sr, Cd, Ba): Transport numbers and partial ionic conductivities, RUSS J ELEC, 37(3), 2001, pp. 326-329
Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Zhang, AP Ren, F Pearton, SJ Chyi, JI Nee, TE Chou, CC Lee, CM
Citation: Ay. Polyakov et al., Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures, J ELEC MAT, 30(3), 2001, pp. 147-155
Semi-insulating LEC GaAs as a material for radiation detectors: materials science issues
Authors: Markov, AV Mezhennyi, MV Polyakov, AY Smirnov, NB Govorkov, AV Eremin, VK Verbitskaya, EM Gavrin, VN Kozlova, YP Veretenkin, YP Bowles, TJ
Citation: Av. Markov et al., Semi-insulating LEC GaAs as a material for radiation detectors: materials science issues, NUCL INST A, 466(1), 2001, pp. 14-24
Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SIC by hydride vapor phase epitaxy
Authors: Polyakov, AY Govorkov, AV Smirnov, NB Nikolaev, AE Nikitina, IP Dmitriev, VA
Citation: Ay. Polyakov et al., Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SIC by hydride vapor phase epitaxy, SOL ST ELEC, 45(2), 2001, pp. 249-253
Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Usikov, AS Shmidt, NM Lundin, WV
Citation: Ay. Polyakov et al., Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire, SOL ST ELEC, 45(2), 2001, pp. 255-259
Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates
Authors: Polyakov, AY Govorkov, AV Smirnov, NB Nikolaev, AE Nikitina, IP Dmitriev, VA
Citation: Ay. Polyakov et al., Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates, SOL ST ELEC, 45(2), 2001, pp. 261-265
Electronic states in modulation doped p-AlGaN/GaN superlattices
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Osinsky, AV Norris, PE Pearton, SJ Van Hove, J Wowchack, AM Chow, RR
Citation: Ay. Polyakov et al., Electronic states in modulation doped p-AlGaN/GaN superlattices, J APPL PHYS, 90(8), 2001, pp. 4032-4038
Fermi level dependence of hydrogen diffusivity in GaN
Authors: Polyakov, AY Smirnov, NB Pearton, SJ Ren, F Theys, B Jomard, F Teukam, Z Dmitriev, VA Nikolaev, AE Usikov, AS Nikitina, IP
Citation: Ay. Polyakov et al., Fermi level dependence of hydrogen diffusivity in GaN, APPL PHYS L, 79(12), 2001, pp. 1834-1836
Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage
Authors: Zhang, AP Johnson, JW Ren, F Han, J Polyakov, AY Smirnov, NB Govorkov, AV Redwing, JM Lee, KP Pearton, SJ
Citation: Ap. Zhang et al., Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage, APPL PHYS L, 78(6), 2001, pp. 823-825
GaN 20-mm diameter ingots grown from melt-solution by seeded technique
Authors: Sukhoveyev, VA Ivantsov, VA Nikitina, IP Babanin, AI Polyakov, AY Govorkov, AV Smirnov, NB Mil'vidskii, MG Dmitriev, VA
Citation: Va. Sukhoveyev et al., GaN 20-mm diameter ingots grown from melt-solution by seeded technique, MRS I J N S, 5, 2000, pp. NIL_376-NIL_381
Deep centers and persistent photoconductivity studies in variously grown GaN films
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Usikov, AS Shmidt, NM Pushnyi, BV Tsvetkov, DV Stepanov, SI Dmitriev, VA Mil'vidskii, MG Pavlov, VF
Citation: Ay. Polyakov et al., Deep centers and persistent photoconductivity studies in variously grown GaN films, MRS I J N S, 5, 2000, pp. NIL_798-NIL_803
Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Dang, G Zhang, AP Ren, F Cao, XA Pearton, SJ Wilson, RG
Citation: Ay. Polyakov et al., Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers, J VAC SCI B, 18(3), 2000, pp. 1237-1243
Polyalkaline effect in solid electrolytes with gamma-K4P2O7 structure
Authors: Smirnov, NB Burmakin, EI Shekhtman, GS
Citation: Nb. Smirnov et al., Polyalkaline effect in solid electrolytes with gamma-K4P2O7 structure, RUS J AP CH, 73(8), 2000, pp. 1405-1411
Co-cation conduction of the (Na1-xKx)(3.8)M0.1P2O7 (M = Ca, Sr, Cd) solid solutions
Authors: Smirnov, NB Burmakin, EI Antonov, BD Shekhtman, GS
Citation: Nb. Smirnov et al., Co-cation conduction of the (Na1-xKx)(3.8)M0.1P2O7 (M = Ca, Sr, Cd) solid solutions, RUSS J ELEC, 36(7), 2000, pp. 736-740
Co-cation conduction in solid electrolytes based on AAlO(2) (A = Li, Na)
Authors: Smirnov, NB Burmakin, EI Shekhtman, GS Stepanov, AP
Citation: Nb. Smirnov et al., Co-cation conduction in solid electrolytes based on AAlO(2) (A = Li, Na), RUSS J ELEC, 36(4), 2000, pp. 408-412
Electroconductivity of solid solutions in the K4P2O7-Rb4P2O7 system
Authors: Shekhtman, GS Smirnov, NB Burmakin, EI
Citation: Gs. Shekhtman et al., Electroconductivity of solid solutions in the K4P2O7-Rb4P2O7 system, RUSS J ELEC, 36(4), 2000, pp. 435-437
Electroconductivity of solid solutions in the K4P2O7-Na4P2O7-Rb4P2O7 system
Authors: Shekhtman, GS Smirnov, NB Burmakin, EI
Citation: Gs. Shekhtman et al., Electroconductivity of solid solutions in the K4P2O7-Na4P2O7-Rb4P2O7 system, RUSS J ELEC, 36(4), 2000, pp. 438-440
Study of GaAs as a material for solar neutrino detectors
Authors: Markov, AV Polyakov, AY Smirnov, NB Govorkov, AV Eremin, VK Verbitskaya, EM Gavrin, VN Kozlova, YP Veretenkin, YP Bowles, TJ
Citation: Av. Markov et al., Study of GaAs as a material for solar neutrino detectors, NUCL INST A, 439(2-3), 2000, pp. 651-661
Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Zhang, AP Ren, F Pearton, SJ Chyi, JI Nee, TE Chuo, CC Lee, CM
Citation: Ay. Polyakov et al., Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors, SOL ST ELEC, 44(9), 2000, pp. 1549-1555
Spatial distribution of electrical properties in GaN p-i-n rectifiers
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Zhang, AP Ren, F Pearton, SJ Chyi, JI Nee, TE Lee, CM Chuo, CC
Citation: Ay. Polyakov et al., Spatial distribution of electrical properties in GaN p-i-n rectifiers, SOL ST ELEC, 44(9), 2000, pp. 1591-1595
Misfit dislocations at the GaN/SiC interface and their interaction with point defects
Authors: Polyakov, AY Govorkov, AV Smirnov, NB Theys, B Jomard, F Nikitina, IP Nikolaev, AE Dmitriev, VA
Citation: Ay. Polyakov et al., Misfit dislocations at the GaN/SiC interface and their interaction with point defects, SOL ST ELEC, 44(11), 2000, pp. 1955-1960
Effects of proton implantation on electrical and recombination properties of n-GaN
Authors: Polyakov, AY Usikov, AS Theys, B Smirnov, NB Govorkov, AV Jomard, F Shmidt, NM Lundin, WV
Citation: Ay. Polyakov et al., Effects of proton implantation on electrical and recombination properties of n-GaN, SOL ST ELEC, 44(11), 2000, pp. 1971-1983
Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers
Authors: Zhang, AP Dang, G Ren, F Han, J Polyakov, AY Smirnov, NB Govorkov, AV Redwing, JM Cho, H Pearton, SJ
Citation: Ap. Zhang et al., Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers, APPL PHYS L, 76(25), 2000, pp. 3816-3818
Risultati: 1-25 | 26-29