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Results:
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Results: 11
Electrical characterization of ruthenium-doped InP grown by low pressure hydride vapor phase epitaxy
Authors:
Soderstrom, D
Lourdudoss, S
Wallnas, M
Dadgar, A
Stenzel, O
Bimberg, D
Schumann, H
Citation: D. Soderstrom et al., Electrical characterization of ruthenium-doped InP grown by low pressure hydride vapor phase epitaxy, EL SOLID ST, 4(6), 2001, pp. G53-G55
Authors:
Soderstrom, D
Lourdudoss, S
Dadgar, A
Stenzel, O
Bimberg, D
Schumann, H
Citation: D. Soderstrom et al., Dopant diffusion and current-voltage studies on epitaxial InP codoped withRu and Fe, J ELEC MAT, 30(8), 2001, pp. 972-976
Authors:
Soderstrom, D
Lourdudoss, S
Dadgar, A
Stenzel, O
Bimberg, D
Schumann, H
Citation: D. Soderstrom et al., Dopant diffusion and current-voltage studies on epitaxial InP codoped withRu and Re (vol 30, pg 972, 2001), J ELEC MAT, 30(11), 2001, pp. 1476-1476
Authors:
Sun, YT
Messmer, ER
Soderstrom, D
Jahan, D
Lourdudoss, S
Citation: Yt. Sun et al., Temporally resolved selective area growth of InP in the openings off-oriented from [110] direction, J CRYST GR, 225(1), 2001, pp. 9-15
Authors:
Soderstrom, D
Lourdudoss, S
Citation: D. Soderstrom et S. Lourdudoss, Resistivity analysis on n-semi-insulating-n and p-semi-insulating-p structures exemplified with semi-insulating InP, J APPL PHYS, 89(7), 2001, pp. 4004-4009
Authors:
Soderstrom, D
Lourdudoss, S
Wallnas, M
Dadgar, A
Stenzel, O
Bimberg, D
Schumann, H
Citation: D. Soderstrom et al., Studies on ruthenium-doped InP growth by low-pressure hydride vapor-phase epitaxy, J ELCHEM SO, 148(7), 2001, pp. G375-G378
Authors:
Messmer, ER
Soderstrom, D
Hult, P
Marcinkevicius, S
Lourdudoss, S
Look, DC
Citation: Er. Messmer et al., Properties of semi-insulating GaAs : Fe grown by hydride vapor phase epitaxy, J ELCHEM SO, 147(8), 2000, pp. 3109-3110
Authors:
Jahan, D
Soderstrom, D
Lourdudoss, S
Citation: D. Jahan et al., Kinetic study of InP : Fe growth by LP-HVPE with ferrocene as Fe source, J ELCHEM SO, 147(2), 2000, pp. 744-746
Authors:
Lourdudoss, S
Soderstrom, D
Kjebon, O
Citation: S. Lourdudoss et al., Epitaxial semi-insulating III-V layers for optoelectronic device fabrication, OPTOEL PROP, 9, 2000, pp. 131-163
Authors:
Soderstrom, D
Lourdudoss, S
Carlstrom, CF
Anand, S
Kahn, M
Kamp, M
Citation: D. Soderstrom et al., Buried heterostructure complex-coupled distributed feedback 1.55 mu m lasers fabricated using dry etching processes and quaternary layer overgrowth, J VAC SCI B, 17(6), 1999, pp. 2622-2625
Authors:
Cesna, A
Soderstrom, D
Marcinkevicius, S
Lourdudoss, S
Citation: A. Cesna et al., Carrier trapping in iron-doped GaInP, J APPL PHYS, 85(2), 1999, pp. 1234-1236
Risultati:
1-11
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