Authors: Pomozov, YV Sosnin, MG Khirunenko, LI Abrosimov, NV Schroder, W

Citation: Yv. Pomozov et al., Origin of an absorption band peaked at 5560 cm(-1) and related to divacancies in Si1-xGex, SEMICONDUCT, 35(8), 2001, pp. 890-894

Authors: Pomozov, YV Sosnin, MG Khirunenko, LI Yashnik, VI Abrosimov, NV Schroder, W Hohne, M

Citation: Yv. Pomozov et al., Oxygen-containing radiation defects in Si1-xGex, SEMICONDUCT, 34(9), 2000, pp. 989-993

Authors: Pomozov, YV Sosnin, MG Khirunenko, LI Yashnik, VI

Citation: Yv. Pomozov et al., Specific features of the behavior of oxygen in Sn-doped silicon, SEMICONDUCT, 34(9), 2000, pp. 994-997

Authors: Khirunenko, LI Pomozov, YV Sosnin, MG Abrosimov, NV Hohne, M Shroder, W

Citation: Li. Khirunenko et al., Oxygen and peculiarities of its precipitation in Si1-xGex, PHYSICA B, 274, 1999, pp. 305-307

Authors: Khirunenko, LI Pomozov, YV Sosnin, MG Shinkarenko, VK

Citation: Li. Khirunenko et al., Oxygen in silicon doped with isovalent impurities, PHYSICA B, 274, 1999, pp. 317-321