Authors: Souliere, V Dumont, H Auvray, L Monteil, Y

Citation: V. Souliere et al., Effect of V/III ratio and PH3 annealing on InAs dots grown by MOVPE on InP(001) step-bunched surfaces, J CRYST GR, 226(1), 2001, pp. 31-38

Authors: Borgi, K Hjiri, M Hassen, F Maaref, H Souliere, V Monteil, Y

Citation: K. Borgi et al., Optical study of inverted interface in InP/InAlAs/InP structures grown by MOCVD, MICROEL ENG, 51-2, 2000, pp. 299-308

Authors: Letartre, X Rojo-Romeo, P Tardy, J Bejar, M Gendry, M Py, MA Beck, M Buhlmann, HJ Ren, L Villar, C Sanz-Hervas, A Serrano, JJ Blanco, JM Aguilar, M Marty, O Souliere, V Monteil, Y

Citation: X. Letartre et al., Influence of strain compensation on structural and electrical properties of InAlAs/InGaAs HEMT structures grown on InP, JPN J A P 1, 38(2B), 1999, pp. 1169-1173

Authors: Battut, V Blanc, JP Goumet, E Souliere, V Monteil, Y

Citation: V. Battut et al., NO2 sensor based on InP epitaxial thin layers, THIN SOL FI, 348(1-2), 1999, pp. 266-272

Authors: Dumont, H Auvray, L Dazord, J Souliere, V Monteil, Y Bouix, J Ougazzaden, A

Citation: H. Dumont et al., Surface morphology of InGaAs and InP materials grown with trimethylarsenicand arsine on vicinal InP substrates, J CRYST GR, 197(4), 1999, pp. 755-761

Authors: Dumont, H Auvray, L Dazord, J Souliere, V Monteil, Y Bouix, J

Citation: H. Dumont et al., Strain-induced surface morphology of slightly mismatched InxGa1-xAs films grown on vicinal (100) InP substrates, J APPL PHYS, 85(10), 1999, pp. 7185-7190