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Results: 1-14 |
Results: 14
Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates
Authors: Lubyshev, D Liu, WK Stewart, TR Cornfeld, AB Fang, XM Xu, X Specht, P Kisielowski, C Naidenkova, M Goorsky, MS Whelan, CS Hoke, WE Marsh, PF Millunchick, JM Svensson, SP
Citation: D. Lubyshev et al., Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates, J VAC SCI B, 19(4), 2001, pp. 1510-1514
MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source
Authors: Zhukov, AE Zhao, R Specht, P Ustinov, VM Anders, A Weber, ER
Citation: Ae. Zhukov et al., MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source, SEMIC SCI T, 16(5), 2001, pp. 413-419
Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth
Authors: Park, Y Cich, MJ Zhao, R Specht, P Weber, ER Stach, E Nozaki, S
Citation: Y. Park et al., Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth, J VAC SCI B, 18(3), 2000, pp. 1566-1571
Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4
Authors: Liu, WK Lubyshev, DI Specht, P Zhao, R Weber, ER Gebauer, J SpringThorpe, AJ Streater, RW Vijarnwannaluk, S Songprakob, W Zallen, R
Citation: Wk. Liu et al., Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4, J VAC SCI B, 18(3), 2000, pp. 1594-1597
Frictional drag between coupled two-dimensional hole gases in GaAs/Al0.3Ga0.7As heterostructures
Authors: Jorger, C Cheng, SJ Rubel, H Dietsche, W Gerhardts, R Specht, P Eberl, K von Klitzing, K
Citation: C. Jorger et al., Frictional drag between coupled two-dimensional hole gases in GaAs/Al0.3Ga0.7As heterostructures, PHYS REV B, 62(3), 2000, pp. 1572-1575
Defect identification in GaAs grown at low temperatures by positron annihilation
Authors: Gebauer, J Borner, F Krause-Rehberg, R Staab, TEM Bauer-Kugelmann, W Kogel, G Triftshauser, W Specht, P Lutz, RC Weber, ER Luysberg, M
Citation: J. Gebauer et al., Defect identification in GaAs grown at low temperatures by positron annihilation, J APPL PHYS, 87(12), 2000, pp. 8368-8379
Improvement of molecular beam epitaxy-grown low-temperature GaAs through pdoping with Be and C
Authors: Specht, P Lutz, RC Zhao, R Weber, ER Liu, WK Bacher, K Towner, FJ Stewart, TR Luysberg, M
Citation: P. Specht et al., Improvement of molecular beam epitaxy-grown low-temperature GaAs through pdoping with Be and C, J VAC SCI B, 17(3), 1999, pp. 1200-1204
Native point defect analysis in non-stoichiometric GaAs: an annealing study
Authors: Lutz, RC Specht, P Zhao, R Lam, OH Borner, F Gebauer, J Krause-Rehberg, R Weber, ER
Citation: Rc. Lutz et al., Native point defect analysis in non-stoichiometric GaAs: an annealing study, PHYSICA B, 274, 1999, pp. 722-724
Femtosecond nonlinear optics of low-temperature grown semiconductors
Authors: Siegner, U Haiml, M Morier-Genoud, F Lutz, RC Specht, P Weber, ER Keller, U
Citation: U. Siegner et al., Femtosecond nonlinear optics of low-temperature grown semiconductors, PHYSICA B, 274, 1999, pp. 733-736
Properties of C-doped LT-GaAs grown by MBE using CBr4
Authors: Liu, WK Bacher, K Towner, FJ Stewart, TR Reed, C Specht, P Lutz, RC Zhao, R Weber, ER
Citation: Wk. Liu et al., Properties of C-doped LT-GaAs grown by MBE using CBr4, J CRYST GR, 202, 1999, pp. 217-220
Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs
Authors: Maltez, RL Liliental-Weber, Z Washburn, J Behar, M Klein, PB Specht, P Weber, ER
Citation: Rl. Maltez et al., Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs, J APPL PHYS, 85(2), 1999, pp. 1105-1113
Femtosecond response times and high optical nonlinearity in beryllium-doped low-temperature grown GaAs
Authors: Haiml, M Siegner, U Morier-Genoud, F Keller, U Luysberg, M Specht, P Weber, ER
Citation: M. Haiml et al., Femtosecond response times and high optical nonlinearity in beryllium-doped low-temperature grown GaAs, APPL PHYS L, 74(9), 1999, pp. 1269-1271
Optical nonlinearity in low-temperature-grown GaAs: Microscopic limitations and optimization strategies
Authors: Haiml, M Siegner, U Morier-Genoud, F Keller, U Luysberg, M Lutz, RC Specht, P Weber, ER
Citation: M. Haiml et al., Optical nonlinearity in low-temperature-grown GaAs: Microscopic limitations and optimization strategies, APPL PHYS L, 74(21), 1999, pp. 3134-3136
Reflectance difference spectroscopy of GaAs asymmetric surface quantum wells above the fundamental gap
Authors: Lastras-Martinez, LF Santos, PV Ronnow, D Cardona, M Specht, P Eberl, K
Citation: Lf. Lastras-martinez et al., Reflectance difference spectroscopy of GaAs asymmetric surface quantum wells above the fundamental gap, PHYS ST S-A, 170(2), 1998, pp. 317-321
Risultati: 1-14 |